SFF116N10M

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF116N10M SFF116N10Z 1/ DESIGNER’S DATA SHEET Part Number / Ordering Information SFF116N10 ___ ___ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ ____ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level 116 AMP , 100 Volts, 15 mΩ Avalanche Rated N-channel MOSFET Features: • • • • • • • • Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Lead Option 3/ Package 3/ 4/ M = TO-254 Z = TO-254Z __ = Straight Leads DB = Down Bend UB = Up Bend Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For package outlines / lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics o @25 C. TO-254 continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC Value 100 ±20 ±30 55 116 80 60 2500 80 150 -55 to +175 1.0 (typ.0.75) TO-254Z Units V V A A A mJ W ºC ºC /W @ TC = 25ºC @ TC = 25ºC @ TC = 175ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0037B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF116N10M SFF116N10Z Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 50A, Tj= 25 C o VGS = 10V, ID = 50A, Tj=125 C o VGS = 10V, ID = 50A, Tj= 150 C VDS = VGS, ID = 1.0mA, Tj= 25oC o VDS = VGS, ID = 1.0mA, Tj= 125 C VDS = VGS, ID = 1.0mA, Tj= -55oC VGS = ±20V, Tj= 25 C o VGS = ±20V, Tj= 125 C VDS = 100V, VGS = 0V, Tj = 25 C o VDS = 100V, VGS = 0V, Tj = 125 C VDS = 100V, VGS = 0V, Tj = 175oC VDS = 15V, ID = 35A, Tj = 25oC VGS = 12V VDS = 35V ID = 50A VGS = 11V VDS = 50V ID = 35A RG = 2.35Ω, pw= 3us IF = 35A, VGS = 0V IF = 50A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz o o o Electrical Characteristics 5/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Min 100 –– –– –– 3.0 2.0 –– –– –– –– –– –– 10 –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 110 10 16 20 4.5 3.5 5.0 10 30 0.01 2.5 25 60 125 35 65 39 67 80 67 0.82 240 0.85 4800 2050 600 Max –– 15 25 –– 5.0 –– 6 ±100 –– 25 250 –– –– 250 75 120 50 80 100 80 1.2 300 –– –– –– –– Units V mΩ BVDSS RDS(on) Gate Threshold Voltage VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr Qrr Ciss Coss Crss V nA μA μA μA Mho nC Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance nsec V nsec μC pF Available Part Numbers: Consult Factory TO254 (M) PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO254Z (Z) PIN 3 PIN 2 PIN 1 PIN 3 PIN 2 PIN 1 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0037B DOC