SFF130-3_1

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF130/3 & SFF130/66 14 AMP / 100 Volts 0.18 Ω N-Channel Power MOSFET Features: • • • • • • • • • • • Rugged Construction with Poly Silicon Gate Low RDS(ON) a nd High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package Available in both hot case and isolated versions Ideal for low power applications TX, TXV, Space Level Screening Available 2/ • Replacement for IRFF130 & 2N6756 Types DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF130 __ __ │ └ Screening 2/ │ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ Package │ └ /3= TO-3 /66= TO-66 TO-66 TO-3 Maximum Ratings 3/ Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Power Dissipation Operating & Storage Temperature Thermal Resistance Junction to Case Single Pulse Avalanche Energy Repetitive Avalanche Energy TO-66 TO-3 .135 MAX Symbol VDS VGS TC = 25ºC TC = 100ºC TC = 25ºC TA = 25ºC ID PD Top & Tstg Rθ JC EAS EAR Value 100 ±20 14 9 25 19 -55 to +150 5 75 7.5 Units Volts Volts Amps Watts ºC ºC/W mJ mJ .165 2x Ø.151 SEATING PLANE .525 MAX .675 .655 2x R.188 MAX 2x .043 .038 Ø.875 MAX .440 .420 2 2x .225 .205 1 .450 .250 2x .312 MIN 1.197 1.177 NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500/542. 3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00307B DOC Solid State Devices, Inc. SFF130/3 & SFF130/66 Symbol BVDSS ΔBVDSS ΔTj RDS(on) VGS(th) gfs 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 μA) T emperature Coefficient of Breakdown Voltage Drain to Source On State Resistance ID=9A ID=14A (VGS=10 V ) Gate Threshold Voltage (VDS=VGS, ID=250 μA ) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 9A) Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse T otal Gate Charge Gate to Source Charge Gate to Drain Charge T urn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TJ=25ºC IF=10A Di/dt=100A/μsec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS=10 Volts 50% rated VDS Rated ID VDD=50% Rated VDS 50% rated ID RG= 7.5Ω M in 100 –– –– 2.0 4.6 –– –– –– –– 12 1.5 5 –– –– –– –– –– –– –– –– –– –– Typ –– 130 0.13 0.14 2.8 7 –– –– –– –– 17 3.7 7.0 9.5 42 22 25 1 120 0.58 650 250 44 M ax –– –– 0.18 0.21 4.0 –– 25 250 +100 -100 35 10 20 35 80 60 45 1.5 300 3 –– –– –– Units Volts mV/ ºC Ω V mho μA IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VSD trr QRR Ciss Coss Crss nA nC nsec V nsec μC pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Number: SFF130/3; SFF130/66 PIN ASSIGNMENT (Standard) Package TO-3 TO-66 Drain Case Case Source Pin 2 Pin 2 Gate Pin 1 Pin 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00307B DOC