SFF140JBW

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF140J SFF140JBW 28 AMP / 100 Volts 0.077 Ω N-Channel POWER MOSFET Features: • • • • • • • • • • • • Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IRF140/540 Types Available with enhanced flexibility Cu pins: SFF140JBW DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF140 _J_ __ __ ¦ + Screening 2/ __ = Not Screen ¦ ¦ ¦ TX = TX Level ¦ ¦ TXV = TXV Level ¦ ¦ S = S Level ¦ ¦ ¦ + Lead Option 3/ __ = Cooper Core Alloy Leads ¦ BW = Welded Copper Leads ¦ ¦ + Package: TO-257 Maximum Ratings Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TC = 25ºC TC = 55ºC Symbol VDS VGS ID PD Top & Tstg RθJC Value 100 ±20 28 62.5 47.5 -55 to +150 2 Units Volts Volts Amps W ºC ºC/W TO-257 Pin Out: Pin1: Drain Pin2: Source Pin3: Gate PIN 3 PIN 2 PIN 1 SUFFIX: J SUFFIX: JD SUFFIX: JU NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00029C DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF140J SFF140JBW Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V, ID= rated ID) Gate Threshold Voltage (VDS=VGS, ID= 250µA) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 60% Rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=150ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25ºC IF=10A Di/dt=100A/µsec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS=10 Volts 60% rated VDS 60% Rated ID VDD=50% Rated VDS 60% Rated ID RG= 6.2Ω VGS=10 Volts Symbol BVDSS RDS(on)1 RAS(on)2 VGS(th) gfs IDSS Min 100 –– Typ –– 0.067 –– Max –– 0.077 0.125 4.0 –– 25 250 +100 -100 75 12 35 23 110 60 75 2.5 400 1.9 –– –– –– Units Volts Ω A V S(mho) µA 2.0 8.7 –– –– –– –– –– –– –– –– –– –– –– –– –– 0.44 –– –– –– 2.4 13 –– –– –– –– 40 8 19 15 72 40 50 1.3 150 0.91 1750 575 125 IGSS Qg Qgs Qgd td(on) nA nC tr td(off) tf nsec VSD trr QRR Ciss Coss Crss V nsec nC pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00029C DOC