SFF23N60M

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF23N60M SFF23N60Z 15 AMP, 600 Volts, 320 mΩ Avalanche Rated N-channel MOSFET Features: • • • • • • • • Advanced low gate charge process Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254 TO-254Z Note 1: maximum current limited by package configuration Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single / Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance TO254 (M) continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS / EAR PD TOP & TSTG Rjc TO254Z (Z) Value 600 ±30 ±40 15 7 23 23 1500 / 30 150 -55 to +150 0.83 (typ.0.6) Units V V A A A mJ W ºC ºC /W @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC (Junction to Case) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0028A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF23N60M SFF23N60Z Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 11.5A, Tj= 25oC VGS = 10V, ID = 25A, Tj=25oC VGS = 10V, ID = 11.5A, Tj= 125oC VDS = VGS, ID = 4mA, Tj= 25oC VDS = VGS, ID = 1mA, Tj= 25oC VGS = ±30V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 600V, VGS = 0V, Tj = 25oC VDS = 480V, VGS = 0V, Tj = 125oC VDS = 10V, ID = 11.5A, Tj = 25oC VGS = 10V VDS = 300V ID = 16.5A VGS = 10V VDS = 300V ID = 16.5A RG = 2.0Ω, pw= 3us IF = 23A, VGS = 0V IF = 16.5A, VGS = 0V IF = 16.5A, di/dt = 100A/usec VDS = 15.2V, 1 sec, Ta = 25oC VDS = 65V, 1 sec, Ta = 25oC VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr IRM(rec) Qrr SOA1 SOA2 Ciss Coss Crss Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Safe Operating Area Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 600 –– –– –– 2.0 –– –– –– –– –– 10 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ Max 620 300 300 670 3.5 3.4 20 30 0.1 0.085 20 100 23 45 28 33 80 23 1.0 0.87 210 tbd 1.3 –– 320 –– –– 4.5 –– ±100 –– 25 1 –– –– –– –– –– –– –– –– 1.5 –– 250 –– –– 16.5 1.05 4100 400 120 –– –– –– Units V mΩ V nA μA mA Mho nC nsec V nsec A μC A pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines / lead bending options / pinout configurations Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0028A DOC