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SFF240JR

SFF240JR

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SFF240JR - N-Channel Power MOSFET - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SFF240JR 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF240J SFF240JR 15 AMP, 200 Volts, 0.18 Ω N-Channel Power MOSFET Screening2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level DESIGNER’S DATA SHEET Part Number / Ordering Information1/ SFF240 ___ ___ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ ____ └ Features:        Rugged construction with polysilicon gate Low RDS(on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Ceramic seals for improved hermeticity Hermetically sealed package TX, TXV, S-Level screening available Replaces: IRFY240 and 2N7219 Types Pin Configuration __ = Normal R = Reverse Package3/ J = TO-257     Maximum Ratings Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (package limited) @ 25ºC Max. Instantaneous Drain Current (Tj limited) TC = 25ºC Max. Avalanche current Single Pulse Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Maximum current limited by package configuration 4/ Unless otherwise specified, all electrical characteristics @25oC. Symbol VDS continuous transient VGS ID1 ID2 @ L = 0.1 mH @ L = 0.1 mH @ TC = 25ºC @ TC = 55ºC IAS EAS PD TOP & TSTG RθJC Value 200 ±20 ±30 15 16 15 450 63 48 -55 to +150 2 TO-257 Units V V A A A mJ W ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00111B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF240J SFF240JR Symbol VGS = 0V, ID = 1 mA VGS = 10V, ID = 10A, Tj = 25 C VGS = 10V, ID = 10A, Tj =125oC VGS = 10V, ID = 18A, Tj = 25oC VDS = VGS, ID = 250µA, Tj = 25 C VDS = VGS, ID = 250µA, Tj = 125oC VDS = VGS, ID = 250µA, Tj = -55oC VDS ≥ 10V, IDS = 10A, Tj = 25oC o o Electrical Characteristics4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance On State Drain Current Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 200 –– –– –– 15 2.0 –– –– 6.5 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 220 0.13 0.25 0.135 –– 3.0 2.2 3.5 10 0.02 10 10 10 10 10 50 12 30 25 15 50 10 –– 290 2.6 1200 450 150 Max –– 0.18 –– 0.25 –– 4.0 –– –– –– 25 250 100 -100 200 -200 60 15 38 35 90 60 65 2.0 500 5.3 –– –– –– Units V Ω A V S(Ʊ) μA BVDSS RDS(on) ID(on) VGS(th) gfs IDSS IGSS1 IGSS2 Qg Qgs Q gd td(on) tr td(off) tf VSD trr Q rr Ciss Coss Crss VDS > ID(on) x RDS(on) Max, VGS = 10V, Tj = 25oC VDS = max rated voltage, VGS = 0V, Tj = 25 C VDS = max rated voltage, VGS = 0V, Tj = 125oC At rated VGS, Tj = 25oC At rated VGS, Tj = 125oC VGS = 10V VDS= 100V Rated ID VDD = 100 V ID= 15 A RG = 9.1Ω VGS = 10 V IS = Rated ID, VGS = 0V, Tj = 25oC Tj = 25oC, IF = Rated ID, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz o Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance nA nC nsec V nsec μC pF NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00111B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF240J SFF240JR TO-254 (J) Package TO-257 (J) TO-257 (JR) PIN ASSIGNMENT (Standard) Drain Source Gate Pin 1 Pin 2 Pin 3 Pin 2 Pin 3 Pin 1 Available Part Numbers: SFF240J, SFF240JR NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00111B DOC
SFF240JR
1. 物料型号: - 型号:SFF240J 和 SFF240JR

2. 器件简介: - 该器件是一个15安培、200伏特的N-Channel Power MOSFET,具有以下特点:坚固的多晶硅栅结构、低RDS(on)和高跨导、优异的高温稳定性、极快的开关速度、快速恢复和优越的dv/dt性能、增加的反向能量能力、低输入和转移电容以便于并联、陶瓷密封以提高密封性、提供TX、TXV、S-Level等级的筛选。

3. 引脚分配: - TO-257 (J) 封装:漏极(Drain)在Pin 1,源极(Source)在Pin 2,栅极(Gate)在Pin 3。 - TO-257 (JR) 封装:漏极(Drain)在Pin 2,源极(Source)在Pin 3,栅极(Gate)在Pin 1。

4. 参数特性: - 最大额定值:漏源电压(Vps)为200V,栅源电压(VGs)连续瞬态为+20±30V,最大连续漏电流(ID1)为15A(受封装限制),最大瞬态漏电流(ID2)为16A,最大雪崩电流(IAS)为15A,单脉冲雪崩能量(EAS)为450mJ,总功率耗散(PD)分别为63W和48W(在25°C和55°C时),工作和存储温度范围(TOP & TSTG)为-55至+150℃,最大热阻(ReJc)为2℃/W。

5. 功能详解应用信息: - 该器件适用于需要高效率、高速度和高稳定性的功率转换应用,例如开关电源、电机控制和电源管理。

6. 封装信息: - 提供的封装类型为TO-257 (J) 和 TO-257 (JR)。
SFF240JR 价格&库存

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