SFF24N50M

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF24N50M SFF24N50Z DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF24N50 __ __ __ ¦ ¦ + Screening 2/ __ = Not Screen ¦¦ TX = TX Level ¦¦ TXV = TXV Level ¦¦ S = S Level ¦¦ ¦ + Lead Option 3/ __ = Straight Leads ¦ DB = Down Bend ¦ UB = Up Bend ¦ + Package 3/ M = TO-254 24 AMP / 500 Volts 0.2 Ω N-Channel MOSFET Features: Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IXTH24N50 Types Z = TO-254Z • • • • • • • • • • • Maximum Ratings Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Avalanche Current Avalanche Energy Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) Symbol VDS VGS ID Repetitive Repetitive Single Pulse TC = 25ºC TC = 55ºC IAR EAR EAS PD Top & Tstg RθJC Value 500 ±20 24 21 1 690 150 114 -55 to +150 0.83 Units Volts Volts Amps Amps mJ W ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00165F DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF24N50M SFF24N50Z Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V) Gate Threshold Voltage (VDS=VGS, ID= 4mA) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25ºC IF=10A Di/dt=100A/µsec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS=10 Volts 50% rated VDS 50% Rated ID VDD=50% Rated VDS 50% Rated ID RG= 6.2Ω VGS=10 Volts Symbol BVDSS RDS(on) ID(on) VGS(th) gfs IDSS Min 500 –– 24 2.0 8 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ –– –– –– –– 12 –– –– –– –– 135 28 62 16 33 65 30 –– –– –– 4200 450 135 Max –– 0.2 –– 4.0 –– 250 1000 +100 -100 180 40 85 30 45 130 40 1.5 500 –– –– –– –– Units Volts Ω A V mho µA IGSS Qg Qgs Qgd td(on) nA nC tr td(off) tf nsec VSD trr QRR Ciss Coss Crss V nsec nC pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF24N50M; SFF24N50MDB; SFF24N50MUB; SFF24N50Z; SFF24N50ZDB; SFF24N50ZUB; PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 Source Pin 2 Pin 2 Gate Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00165F DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF24N50M SFF24N50Z Case Outline: TO-254 (M) .150 Ø.139 .685 .665 .750 .500 PIN 3 .545 .535 2x .155 .145 PIN 2 PIN 1 3x Ø.045 .035 .545 .535 .270 .240 .155 .140 .050 .040 .800 .790 SUFFIX: MDB SUFFIX: M UB Case Outline: TO-254Z (Z) PIN 3 PIN 2 PIN 1 SUFFIX: ZDB SUFFIX: ZUB