SFF250M_2

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF250M SFF250Z 30 AMP / 200 Volts 0.060 Ω typical N-Channel POWER MOSFET Features: Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals Available for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IRFM250 Types DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF250 __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Lead Option 3/ __ = Straight Leads DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z • • • • • • • • • • • Maximum Ratings Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Total Device Dissipation TO-254 (M) Symbol VDS VGS ID Top & Tstg RθJC TC = 25ºC TC = 55ºC TO-254Z (Z) Value 200 ±20 30 -55 to +150 1 125 95 Units Volts Volts Amps ºC ºC/W W PD For Pin Out Configuration and Optional Lead Bend, See Page 3. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00049E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF250M SFF250Z Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS= 0 V, ID= 250μA Drain to Source On State Resistance (VGS= 10 V, ID= 18 A Gate Threshold Voltage (VDS= VGS, ID= 250μA Forward Transconductance (VDS≥ IN(on) X RDS(on) Max, ID= 18 A Zero Gate Voltage Drain Current (VDS= 200 V, VGS= 0 V) (VDS= 200 V, VGS= 0 V, TA= 125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= 30 A, VGS= 0 V, TJ= 25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance At rated VGS VGS=10 V VDS= 100 V ID= 30 A VDD= 100 V ID= 15 A RG= 6.2Ω Symbol BVDSS RDS(on) VGS(th) gfs IDSS Min 200 –– 2 10 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ –– 0.06 3 17 –– –– –– –– 70 18 35 29 35 75 35 1.1 150 2.0 4200 650 120 Max –– 0.085 5 –– 25 250 +100 -100 120 25 65 30 180 100 120 1.5 630 8 –– –– –– Units V Ω V mho μA IGSS Qg Qgs Qgd td(on) tr td(off) tf VSD nA nC nsec V nsec μC pF TJ= 25ºC IF= 10 A di/dt= 100 A/μsec VGS= 0 Volts VDS= 25 Volts f= 1 MHz trr QRR Ciss Coss Crss For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF250M; SFF250MDB; SFF250MUB; SFF250Z; SFF250ZDB; SFF250ZUB; PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 Source Pin 2 Pin 2 Gate Pin 3 Pin 3 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00049E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF250M SFF250Z Case Outline: TO-254 (M) .150 Ø.139 .685 .665 .750 .500 PIN 3 .545 .535 2x .155 .145 PIN 2 PIN 1 3x Ø.045 .035 .545 .535 .270 .240 .155 .140 .050 .040 .800 .790 SUFFIX: MDB SUFFIX: MUB Case Outline: TO-254Z (Z) PIN 3 PIN 2 PIN 1 SUFFIX: ZDB SUFFIX: ZUB NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00049E DOC