Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF250M SFF250Z 30 AMP / 200 Volts 0.060 Ω typical N-Channel POWER MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals Available for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IRFM250 Types
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/ SFF250 __ __ __
│ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Lead Option 3/ __ = Straight Leads
DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z
• • • • • • • • • • •
Maximum Ratings
Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Total Device Dissipation
TO-254 (M)
Symbol
VDS VGS ID Top & Tstg RθJC TC = 25ºC TC = 55ºC
TO-254Z (Z)
Value
200 ±20 30 -55 to +150 1 125 95
Units
Volts Volts Amps ºC ºC/W W
PD
For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF250M SFF250Z
Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified)
Drain to Source Breakdown Voltage (VGS= 0 V, ID= 250μA Drain to Source On State Resistance (VGS= 10 V, ID= 18 A Gate Threshold Voltage (VDS= VGS, ID= 250μA Forward Transconductance (VDS≥ IN(on) X RDS(on) Max, ID= 18 A Zero Gate Voltage Drain Current (VDS= 200 V, VGS= 0 V) (VDS= 200 V, VGS= 0 V, TA= 125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= 30 A, VGS= 0 V, TJ= 25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance At rated VGS VGS=10 V VDS= 100 V ID= 30 A VDD= 100 V ID= 15 A RG= 6.2Ω
Symbol
BVDSS RDS(on) VGS(th) gfs IDSS
Min
200 –– 2 10 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– ––
Typ
–– 0.06 3 17 –– –– –– –– 70 18 35 29 35 75 35 1.1 150 2.0 4200 650 120
Max
–– 0.085 5 –– 25 250 +100 -100 120 25 65 30 180 100 120 1.5 630 8 –– –– ––
Units
V Ω V mho μA
IGSS Qg Qgs Qgd td(on) tr td(off) tf VSD
nA
nC
nsec
V nsec μC pF
TJ= 25ºC IF= 10 A di/dt= 100 A/μsec VGS= 0 Volts VDS= 25 Volts f= 1 MHz
trr QRR Ciss Coss Crss
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers: SFF250M; SFF250MDB; SFF250MUB; SFF250Z; SFF250ZDB; SFF250ZUB;
PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 Source Pin 2 Pin 2 Gate Pin 3 Pin 3
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF250M SFF250Z
Case Outline: TO-254 (M)
.150 Ø.139 .685 .665 .750 .500
PIN 3
.545 .535
2x .155 .145
PIN 2 PIN 1
3x Ø.045 .035
.545 .535
.270 .240
.155 .140
.050 .040
.800 .790
SUFFIX: MDB
SUFFIX: MUB
Case Outline: TO-254Z (Z)
PIN 3 PIN 2
PIN 1
SUFFIX: ZDB
SUFFIX: ZUB
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
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