Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF25P20 Series
25 AMP / 200 Volts 150 mΩ typical P-Channel MOSFET
Features:
• • • • • • • • polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads – several options available Improved (RDS(ON) QG) figure of merit TX, TXV, S-Level screening available
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/ SFF25P20 ___ ___ │ └ Screening 2/
│ │ │ │ └
__ = Not Screened TX = TX Level TXV = TXV S = S Level
Package
2/
S2I = SMD2 Isolated M = TO-254
Maximum Ratings
Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case @ TC = 25ºC Continuous transient @ TC = 25ºC @ TC = 25ºC
Symbol
VDSS VGS ID1 ID3 IAR EAR PD T OP & TSTG R0JC
Value
-200 ±20 ±30 25 95 25 30 250 -55 to +150 0.83 0.6 typical
Units
V V A A A mJ W ºC ºC/W
NOTES:
1/ For ordering information, price, operating curves, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC.
SMD 2 Isolated
TO-254
NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE LEAD FORMING CONFIGURATION
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF25P20 series
Symbol
BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr Ciss Coss Crss
o
Electrical Characteristics (@25oC, unless otherwise specified)
Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. VGS = 0V, ID = 250μA VGS = 10V, ID = 12A, Tj= 25 C o VGS = 10V, ID = 25A, Tj= 25 C VDS = VGS, ID = 250μA VGS = ±20V VDS = 160V, VGS = 0V, Tj = 25 C o VDS = 160V, VGS = 0V, Tj = 125 C VDS = 10V, ID = 24A, Tj = 25oC VGS = 10V VDS = 100V ID = 12A VGS = 10V VDS = 100V ID = 12A RG = 4.7Ω IF = 25A, VGS = 0V IF = 24A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz
o
Min
200 –– –– 3.0 –– –– –– 5 –– –– –– –– –– –– –– –– –– –– –– ––
Typ
–– 125 150 –– –– –– –– 12 150 35 70 35 30 70 30 2.0 250 4200 850 350
Max
–– 150 –– 5.0 ±100 25 1 –– –– –– –– –– –– –– 3.0 –– –– –– ––
Units
V mΩ V nA μA mA Mho nC
nsec V nsec
pF
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF25P20 series
TO-254 (M)
SMD2 Isolated
.50 MIN .920 .50 MIN
1 .610
2 .290 3
.190 .160
.014 .006 A
.160 MAX
3x .11±.02
2x .050
.220 .570 .510 .610
TOLERANCES:
(UNLESS OTHERWISE SPECIFIED)
.XX ± .02 .XXX ± .010
.880
LEAD FORMING CONFIGURATIONS SMD1I dash# -01 -02 -03 A 0.062” 0.000” 0.097”
Package SMD1I
PIN ASSIGNMENT (Standard) Drain Source Pin 1 Pin 2
Gate Pin 3
NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC
很抱歉,暂时无法提供与“SFF25P20MTXV”相匹配的价格&库存,您可以联系我们找货
免费人工找货