SFF27N50Z

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF27N50M SFF27N50Z 1/ DESIGNER’S DATA SHEET Part Number / Ordering Information SFF27N50 ___ ___ ___ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level 27 AMP , 500 Volts, 175 mΩ Avalanche Rated N-channel MOSFET Features: • • • • • • • • Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Lead Option 3/ Package 3/ 4/ M = TO-254 Z = TO-254Z __ = Straight Leads DB = Down Bend UB = Up Bend Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For package outlines / lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration o 5/ Unless otherwise specified, all electrical characteristics @25 C. continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC TO-254 Value 100 ±20 ±30 27 27 18 35 1500 50 100 -55 to +150 1.0 (typ.0.75) Units V V A A A mJ W ºC ºC /W @ TC = 25ºC @ TC = 25ºC @ TC = 125ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC TO-254Z NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00165G DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF27N50M SFF27N50Z Symbol VGS = 0V, ID = 250μA o VGS = 10V, ID = 18A, Tj= 25 C o VGS = 10V, ID = 18A, Tj=125 C o VDS = VGS, ID = 4.0mA, Tj= 25 C o VDS = VGS, ID = 4.0mA, Tj= 125 C VDS = VGS, ID = 4.0mA, Tj= -55oC o VGS = ±20V, Tj= 25 C VGS = ±20V, Tj= 125oC Electrical Characteristics 5/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 500 –– –– –– 3.0 2.0 –– –– –– –– –– 15 –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 510 170 400 4.0 3.0 5.0 10 30 0.01 5.0 35 95 30 35 25 30 75 25 0.95 180 8.0 0.85 5500 510 40 Max –– 175 –– 5.0 –– 6 ±100 –– 25 500 –– 150 –– –– 45 50 150 50 1.5 250 –– –– –– –– –– Units V mΩ BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr IRM Qrr Ciss Coss Crss V nA μA μA Mho nC VDS = 500V, VGS = 0V, Tj = 25 C o VDS = 500V, VGS = 0V, Tj = 125 C VDS = 20V, ID = 18A, Tj = 25oC VGS = 10V VDS = 250V ID = 18A VGS = 10V VDS = 250V ID = 35A RG = 3.0Ω, pw= 3us IF = 35A, VGS = 0V IF = 25A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz o nsec V nsec A μC pF Available Part Numbers: Consult Factory TO254 (M) PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO254Z (Z) PIN 3 PIN 2 PIN 1 PIN 3 PIN 2 PIN 1 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00165G DOC