SFF40N30Z

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF40N30M SFF40N30Z DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF40N30 __ __ __ ¦ ¦ + Screening 2/ __ = Not Screen ¦¦ TX = TX Level ¦¦ TXV = TXV Level ¦¦ S = S Level ¦¦ ¦ + Lead Option 3/ __ = Straight Leads ¦ DB = Down Bend ¦ UB = Up Bend ¦ + Package 3/ M = TO-254 40 AMP / 300 Volts 0.10 Ω N-Channel Power MOSFET Features: Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals for Improved Hermeticity Hermetically Sealed Package TX, TXV, Space Level Screening Available Replacement for IXTH40N30 Types Z = TO-254Z • • • • • • • • • • • Maximum Ratings Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) Symbol VDS VGS ID TC = 25ºC TC = 55ºC PD Top & Tstg RθJC Value 300 ±20 40 150 114 -55 to +150 0.83 Units Volts Volts Amps W ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00141E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF40N30M SFF40N30Z Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V) Gate Threshold Voltage (VDS=VGS, ID= 4mA) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25ºC IF=10A Di/dt=100A/µsec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS=10 Volts 50% rated VDS 50% Rated ID VDD=50% Rated VDS 50% Rated ID RG= 2.0Ω VGS=10 Volts Symbol BVDSS RDS(on) ID(on) VGS(th) gfs IDSS Min 300 –– 40 2.0 15 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ –– –– –– –– 25 –– –– –– –– 177 28 78 30 60 175 45 –– –– –– 4800 745 283 Max –– 0.10 –– 4.0 –– 250 1000 +100 -100 200 50 105 50 90 250 90 1.5 325 –– –– –– –– Units Volts Ω A V mho µA IGSS Qg Qgs Qgd td(on) nA nC tr td(off) tf nsec VSD trr QRR Ciss Coss Crss V nsec nC pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF40N30M; SFF40N30MDB; SFF40N30MUB; SFF40N30Z; SFF40N30ZDB; SFF40N0ZUB; PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 Source Pin 2 Pin 2 Gate Pin 3 Pin 3 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF40N30M SFF40N30Z Case Outline: TO-254 (M) Ø.149 .139 .800 .790 .500 MIN .545 .535 .155 .145 PIN 3 .545 .535 PIN 2 .305 .295 PIN 1 3x Ø.045 .035 .675±.010 .260 .240 .155 .140 .050 .040 SUFFIX: M SUFFIX: MD SUFFIX: MU 2x .190 .150 SUFFIX: MDB SUFFIX: MDB Case Outline: TO-254Z (Z) 2x Ø.150 .140 .545 .535 2x .140 .125 .555 .500 2x .275 .255 2x .155 .145 PIN 3 1.090 .820 .545 1.050 .790 .535 PIN 2 .305 .295 PIN 1 3x .045 .035 SUFFIX: Z .285 .265 2x .275 .255 .260 .240 .055 .035 .155 .135 2x .190 .150 .170 MIN .170 MIN SUFFIX: ZD SUFFIX: ZU SUFFIX: ZDB SUFFIX: ZUB 2x .190 .150