SFF44N50Z

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF44N50M SFF44N50Z 25 AMP , 500 Volts, 110 mΩ Avalanche Rated N-channel MOSFET Features: • • • • • • • • Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254 TO-254Z Note 1: maximum current limited by package configuration Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single / Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance TO254 (M) continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS / EAR PD TOP & TSTG Rjc TO254Z (Z) Value 500 ±20 ±30 25 12 35 20 1100 / 1 125 -55 to +150 1.0 (typ.0.75) Units V V A A A mJ W ºC ºC /W @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC (Junction to Case) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0030A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF44N50M SFF44N50Z Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 20A, Tj= 25oC VGS = 10V, ID = 12A, Tj=125oC VGS = 10V, ID = 20A, Tj= 150oC VDS = VGS, ID = 1.8mA, Tj= 25oC VDS = VGS, ID = 250μA, Tj= 25oC VDS = VGS, ID = 250μA, Tj= -55oC VDS = VGS, ID = 250μA, Tj= 125oC VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 500V, VGS = 0V, Tj = 25oC VDS = 500V, VGS = 0V, Tj = 125oC VDS = 500V, VGS = 0V, Tj = 150oC VDS = 10V, ID = 20A, Tj = 25oC VGS = 10V VDS = 380V ID = 32A VGS = 10V VDS = 380V ID = 32A RG = 2.7Ω, pw= 3us IF = 32A, VGS = 0V IF = 32A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Min 500 –– –– –– 2.1 –– –– –– –– –– –– –– –– 10 –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ Max 530 100 230 270 3.0 2.7 3.2 1.9 10 30 0.01 2.0 10 30 175 28 80 30 10 70 10 1.0 540 45 12 4500 540 100 –– 110 –– –– 3.9 –– –– –– ±100 –– 25 –– 250 –– –– –– –– –– –– –– –– 1.5 –– –– –– –– –– –– Units V mΩ Gate Threshold Voltage VGS(th) V Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr IRM(rec) Qrr Ciss Coss Crss nA μA μA μA Mho nC nsec V nsec A μC pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines / lead bending options / pinout configurations Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0030A DOC