SFF50N30Z

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF50N30M SFF50N30Z 1/ DESIGNER’S DATA SHEET Part Number / Ordering Information SFF50N30 ___ ___ ___ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level 50 AMP , 300 Volts, 50 mΩ Avalanche Rated N-channel MOSFET Features: • • • • • • • • Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Lead Option 3/ Package 3/ 4/ M = TO-254 Z = TO-254Z __ = Straight Leads DB = Down Bend UB = Up Bend Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For package outlines / lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25ºC. TO-254 continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC Value 300 ±20 ±30 50 50 35 50 1500 50 150 -55 to +150 1.0 (typ.0.75) TO-254Z Units V V A A A mJ W ºC ºC /W @ TC = 25ºC @ TC = 25ºC @ TC = 125ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0038B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF50N30M SFF50N30Z Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 35A, Tj= 25ºC VGS = 10V, ID = 35A, Tj=125ºC VDS = VGS, ID = 1.0mA, Tj= 25ºC VDS = VGS, ID = 1.0mA, Tj= 125ºC VDS = VGS, ID = 1.0mA, Tj= -55ºC VGS = ±20V, Tj= 25ºC VGS = ±20V, Tj= 125ºC VDS = 300V, VGS = 0V, Tj = 25ºC VDS = 300V, VGS = 0V, Tj = 125ºC VDS = 10V, ID = 35A, Tj = 25ºC VGS = 10V VDS = 150V ID = 35A VGS = 10V VDS = 150V ID = 50A RG = 4.0Ω, pw= 3us IF = 50A, VGS = 0V IF = 10A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr Qrr Ciss Coss Crss Electrical Characteristics 5/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Min 300 –– –– 2.5 1.5 –– –– –– –– –– 20 –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 310 50 110 4.0 3.0 5.0 10 30 0.01 5.0 33 140 50 60 40 40 110 40 0.95 180 1.3 5000 750 145 Max –– 60 –– 5.0 –– 6 ±100 –– 25 250 –– 250 –– –– 50 50 125 50 1.5 200 –– –– –– –– Units V mΩ V nA μA μA Mho nC Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance nsec V nsec μC pF Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO254Z (Z) TO254 (M) PIN 3 PIN 2 PIN 1 PIN 3 PIN 2 PIN 1 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0038B DOC