SFF60P05M

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF60P05M SFF60P05Z -60 AMP/-50 Volts 33 mΩ P-Channel POWER MOSFET TO-254 (M) TO-254Z (Z) DESIGNER’S DATA SHEET Features: • • • • • • • • • • Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed TX, TXV, and Space Level Screening Available. Consult Factory. Replaces RFG60P05E Types Maximum Ratings Drain - Source Voltage Gate – Source Voltage Continuous Drain Current Operating & Storage Temperature Thermal Resistance, Junction to Case Total Device Power Dissipation TC = 25ºC TC = -55ºC Symbol VDS VGS ID TOP & TSTG ΡθJC PD Value -50 +20 -60 -55 to +150 0.8 156 118 Units V V A ºC ºC/W Watts PACKAGE OUTLINE: TO-254 (M) PACKAGE OUTLINE: TO-254Z (Z) PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 Available with Glass or Ceramic Seals. Contact Factory for Details. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045D DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 4/ SFF60P05M SFF60P05Z Symbol BVDSS RDS(on) RDS(on) VGS(th) gfs TA = 25oC TA = 125oC At Rated VGS VGS = -10V VDD = 40V ID = 60A RL = 0.67Ω VDD = 50% Rated VDS 50% Rated ID IG1 = IG2 = 2A RL = 0.83Ω VGS(clamp) = -10V/+0.6V IS = Rated ID VGS = 0V TJ = 25ºC IF = 10A di/dt = 100A/usec VGS = 0V VDS = -25V f = 1 MHz IDSS IGSS Qg Qgs Qgd t(on) td(on) tr t(off) td(off) tf VSD trr Qrr Ciss Coss Crss Electrical Characteristics Min -50 –– –– -2.0 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ –– –– –– –– –– –– –– –– –– –– –– –– –– 20 70 –– 65 20 –– 140 –– 6000 1800 500 Max –– 0.033 –– -4.0 –– 1 50 -100 100 450 225 15 125 –– –– 125 –– –– -1.9 200 –– –– –– –– Units Volts Ω Amps Volts S µA µA Drain to Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain to Source On State Resistance (VGS = -10V, ID = 60A) On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = -10V) Gate Threshold Voltage (VDS = VGS, ID = -250µA) Forward Transconductance (VDS > ID(on) x RDS(on) Max, IDs = 60% of Rated ID) Zero Gate Voltage Drain Current (VDS = Max Rated Voltage, VGS = 0V) (VDS = 80% Rated VDS, VGS = 0V) Gate to Source Leakage (For Gate to Source Leakage Total Gate Charge Gate to Source Charge Gate to Drain Charge nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage ns Volts ns µC pF Diode Reverse Recovery Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Available Part Numbers: SFF60P05M, SFF60P05MUB, SFF60P05MDB; SFF60P05Z, SFF60P05ZUB, SFF60P05ZDB PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z)