Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF60P05M SFF60P05Z -60 AMP/-50 Volts 25 m typical P-Channel POWER MOSFET
Features:
Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed TX, TXV, and Space Level Screening Available. Consult Factory.
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/ SFF60P05 __ __ __ │ └ │ Screening 2/ │ │ __ = Not Screened TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ Lead Option └ │ __ = Straight Leads │ DB = Down Bend │ UB = Up Bend │ Package 3/ └
M = TO-254 Z = TO-254Z
Maximum Ratings4/
Drain - Source Voltage Gate – Source Voltage Continuous Drain Current Operating & Storage Temperature Thermal Resistance, Junction to Case Total Device Power Dissipation TC = 25ºC TC = -55ºC
Symbol
VDS VGS ID TOP & TSTG RJC PD
Value
-50 +20 -60 -55 to +150 0.8 156 118
Units
V V A ºC ºC/W Watts
NOTES:
TO-254 (M)
TO-254Z (Z)
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Maximum current limited by package configuration. o 4/ Unless otherwise specified, all electrical characteristics @25 C.
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 4/
SFF60P05M SFF60P05Z
Symbol
BVDSS RDS(on)1 RDS(on)2 VGS(th) gfs T A = 2 5 oC TA = 125oC At Rated VGS VGS = -10V VDD = 40V ID = 60A VDD = 25 V ID = 30 A RL = 6.2 IS = Rated ID VGS = 0V TJ = 25ºC IF = 10A di/dt = 100A/usec VGS = 0V VDS = -25V f = 1 MHz IDSS IGSS Qg Qgs Q gd t(on) td(on) tr t(off) td(off) tf VSD trr Q rr Ciss Coss Crss
Electrical Characteristics
Min
-50 –– –– -2.0 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– ––
Typ
-70 0.021 0.021 -2.8 50 0.005 –– -10 10 200 20 80 –– 40 20 –– 90 60 -1.3 140 –– 6000 1800 500
Max
–– 0.033 –– -4.0 –– 1 50 -100 100 300 50 125 125 –– –– 225 –– –– -1.9 200 –– –– –– ––
Units
Volts Volts S A A nC
Drain to Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain to Source On State Resistance (VGS = -10V, ID = 60A) Drain to Source On State Resistance (VGS = -10V, ID = 30A) Gate Threshold Voltage (VDS = VGS, ID = -250A) Forward Transconductance (VDS > ID(on) x RDS(on) Max, IDs = 50% of Rated ID) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0V) (VDS = 40 V, VGS = 0V) Gate to Source Leakage (For Gate to Source Leakage Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage
ns
Volts ns C pF
Diode Reverse Recovery Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF60P05M SFF60P05Z
PACKAGE OUTLINE: TO-254Z (Z)
PACKAGE OUTLINE: TO-254 (M)
PIN 3 PIN 2
PIN 3
PIN 1
PIN 2
PIN 1
Available with glass or ceramic seals – contact factory for details.
Available Part Numbers:
SFF60P05M, SFF60P05MUB, SFF60P05MDB; SFF60P05Z, SFF60P05ZUB, SFF60P05ZDB
PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z)
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045E
DOC
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