SFF6661-39

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF6661/39 0.86 AMP N-CHANNEL MOSFET 90 Volts, 4Ω Features:      Rugged construction Low RDS(on) and high transconductance Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package Very fast switching speed TX, TXV, S-Level screening available2/ Replacement for 2N6661 DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF6661 /39 ___ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /39 = TO-39     Maximum Ratings3/ Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (TJ = 150°C) Max. Instantaneous Drain Current (Tj limited) Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Ambient) (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25°C. Symbol VDS VGS TC = 25°C TC = 100°C TC = 25°C TA = 25°C ID IDM PD TOP & TSTG RθJA RθJC Value 90 ±20 0.86 0.54 3 6.25 0.725 -65 to +150 170 20 TO-39 Units V V A A W °C °C /W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0041B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF6661/39 Symbol VDS = 0V, ID = 1.0μA VDS = VGS, ID = 1.0mA VDS = VGS, ID = 1.0mA, TA= -55°C VDS = VGS, ID = 1.0mA, TA= 125°C VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V, TA = 125°C VDS = 72V, VGS = 0V VDS = 72V, VGS = 0V, TA = 125°C VDS = 10V, VGS = 10V VGS = 5V, ID = 0.3A VGS = 10V, ID = 1A VGS = 10V, ID = 1A, TA=125°C VDS = 7.5V, ID = 0.475A IS = 0.86A, VGS = 0V VGS = 0V VDS = 25V f = 1 MHz VDD = 25V, RL = 23Ω ID = 1A VGEN = 10V, RG = 23Ω BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Ciss Coss Crss Cds t (on) t (off) Electrical Characteristics3/ Drain to Source Breakdown Voltage Gate Threshold Voltage Min 90 0.8 –– 0.3 –– –– –– –– –– –– –– –– 170 0.7 –– –– –– –– –– –– Typ 125 1.6 1.8 1.3 –– –– –– –– 1.8 3.8 3.6 6.7 340 0.9 35 15 2 30 6 8 Max –– 2 2.5 –– ±100 ±500 1 100 –– 5.3 4 7.5 –– 1.4 50 40 10 –– 10 10 Units V V nA μA mA Ω mS V pF Gate to Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain to Source On State Resistance* Forward Transconductance* Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-Source Capacitance Turn-On Time Turn-Off Time nsec CASE OUTLINE: TO-39 (/39) PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 3 Pin 1 Pin 2 TO-39(/39) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0041B DOC