SFF7002KA2GW
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/ SFF7002KA2 __ __
││ ││ │ └ Screening 2/ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package 3/ GW = GULLWING
Dual Microminiature Package 300 mA 60 Volts 2 Ω Dual N-Channel Logic Level TrenchFET MOSFET
• • • • • Features: Low On-resistance, < 2 ohm Low Input Capacitance, < 25 pF Low threshold voltage, < 2 V Fast switching, < 25 ns TX, TXV, and S-Level Screening Available. Consult Factory
Maximum Ratings
Gate – Source Voltage Drain to Source Voltage Continuous Drain Current Instantaneous (pulsed) Drain Current, Tj limited Power Dissipation @ TA= 25oC Maximum Thermal Resistance, Junction to PCB Operating & Storage Temperature
PACKAGE OUTLINE: GULLWING (GW)
2x .050 (=.100) 6x .030 .015 6x .010
Symbol
VGS VDS TA= 25 C TA= 100oC Per Device Total
o
Value
20 60 300 190 800 350 500 250 -65 to +200
Units
Volts Volts mA mA mW mW ºC/W ºC
ID IDM PD RΘJ-PCB 5/ TOP & TSTG
3x .015
PIN 6
PIN 4
PIN 4
.015±.010
.107
.125
.193
5x R.018
PIN 6
.034 PIN 1 PIN 3
.025 PIN 3 PIN 1
.040 ±.010
.107 .130
.010 .035
6x R.010
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0024A
SSDI
.350 ±.010 .033
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF7002KA2GW
Symbol Min
IG = 10 µA, VDS = 0 V VDS = VGS , ID = 0.25 mA VGS = +/-20 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V VGS = +/-5 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V, TA = 85ºC VDS = 50 V, VGS = 0 V VDS = 60 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TA = 85ºC VDS = 60 V, VGS = 0 V,TA = 125ºC VDS = 7.5 V, VGS = 10 V VDS = 4.5 V, VGS = 10 V VDS = 25 V, VGS = 10 V ID = 500 mA, VGS = 10 V ID = 200 mA, VGS = 10 V ID = 50 mA, VGS = 5 V ID = 200 mA, VDS = 10 V IS = 200 mA, VGS = 0 V VDS = 10 V, VGS = 4.5 V, ID= 250 mA VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 200 mA, RL = 150 Ω , RG = 10 Ω, VG= 10 V BVDSS VGS(th) IGSS 60 1.0
Electrical Characteristics 4/
Gate – Source Breakdown Voltage Gate to Source Threshold Voltage Gate to Source Leakage Current
Typ
70 2.0 0.0005
Max
–– 2.5 10 150 100 1000 10 1 100 500
Units
Volts Volts uA nA nA nA nA uA nA uA mA mA A
Zero Gate Voltage Drain Current On-state Drain Current
IDSS 800 500 -
0.4
ID(ON)
2.1 2.8 4.0 3.5 3.5 1.3
Drain – Source On-Resistance Transconductance Body Diode Forward Voltage Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on time Turn-off time
NOTES: * Pulse Test: Pulse Width = 100 µsec, Duty Cycle = 2%
RDS(ON) GFS VSD Qg Ciss Coss Crss tON tOFF –– –– –– –– –– 100
Ω Ω Ω mS V nC pF pF pF ns ns
0.6 30 6 2.5 10 13 25 35
3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC 5/ Mounted on FR1 PCB
1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500
Available Part Numbers:
SFF7002KA2GW
Package Gullwing
Pin 1 Drain
PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 Gate Source Drain
Pin 5 Gate
Pin 6 Source
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0024A
DOC