SFF75N08M

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF75N08M SFF75N08Z 55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET Features: • • • • • • • • • Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Enhanced replacement for IRF7MS2907 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254 and TO-254Z Note 1: maximum current limited by package configuration Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) Symbol VDSS VGS @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ TC = 125ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC ID1 ID2 ID3 ID4 IAR EAR PD TOP & TSTG R0JC Value 75 ±20 55 (note 1) 55 (note 1) 175 75 75 280 210 -55 to +175 0.7 (typ 0.55) Units V V A A A mJ W ºC ºC/W PIN 3 PIN 3 PIN 2 PIN 2 PIN 1 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0021A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 4/ SFF75N08M SFF75N08Z Symbol VGS = 0V, ID = 250µA VGS = 10V, ID = 30A, Tj= 25oC VGS = 10V, ID = 30A, Tj=125oC VGS = 10V, ID = 30A, Tj= 175oC VDS = VGS, ID = 250µA VGS = ±20V VDS = 60V, VGS = 0V, Tj = 25oC VDS = 60V, VGS = 0V, Tj = 125oC VDS = 60V, VGS = 0V, Tj = 200oC VDS = 15V, ID = 30A, Tj = 25oC VGS = 10V VDS = 35V ID = 110A VGS = 10V VDS = 35V ID = 110A RG = 2.5O IF = 110A, VGS = 0V IF = 100A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Q gs Q gd td(on) tr td(off) tf VSD trr IRM(rec) Qrr Ciss Coss Crss Electrical Characteristics Min 75 –– –– –– 2.0 –– –– –– 25 –– –– –– –– –– –– –– –– –– –– –– –– Typ Max Units –– 7.5 10.0 12.5 –– –– –– –– –– 150 35 50 25 210 70 170 1.1 85 4.5 0.16 8000 1000 600 –– 8.5 –– –– 4.0 ±100 1 50 10 –– 220 –– –– 50 300 125 275 1.5 135 7.5 0.35 –– –– –– V mO V nA µA µA mA Mho nC Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance nsec V nsec A µC pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0021A DOC