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SFF80N20

SFF80N20

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SFF80N20 - Avalanche Rated N-channel MOSFET - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SFF80N20 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N20 Series 80 AMP , 200 Volts, 25 mΩ Avalanche Rated N-channel MOSFET Features:        Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF80N20 ___ ___ ___ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ Package 3/ 4/ M = TO-254 Z = TO-254Z __ = Straight Leads DB = Down Bend UB = Up Bend N = TO-258 P = TO-259  Maximum Ratings5/ Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC TO-258 (N) Value 200 ±20 ±30 55 80 48 60 1500 50 150 -55 to +175 1.0 (typ.0.75) Units V V A A A mJ W ºC ºC/W @ TC = 25ºC @ TC = 25ºC @ TC = 175ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC TO-259 (P) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N20 Series Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 48A, Tj= 25 C VGS = 10V, ID = 48A, Tj=125oC VGS = 10V, ID = 48A, Tj= 175oC VDS = VGS, ID = 4.0mA, Tj= 25oC VDS = VGS, ID = 4.0mA, Tj= 125oC VDS = VGS, ID = 4.0mA, Tj= -55oC VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 200V, VGS = 0V, Tj = 25oC VDS = 200V, VGS = 0V, Tj = 125oC VDS = 200V, VGS = 0V, Tj = 150oC VDS = 10V, ID = 48A, Tj = 25oC VGS = 10V VDS = 100V ID = 48A VGS = 10V VDS = 100V ID = 48A RG = 4.0Ω, pw= 3us IF = 48A, VGS = 0V IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz o Electrical Characteristics5/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Min 200 –– –– –– 2.5 1.5 –– –– –– –– –– –– 25 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 220 25 50 65 4.5 3.6 5 10 30 0.01 2.5 25 50 150 45 75 50 50 110 50 0.90 190 11 1 310 17 2.5 5300 1050 175 Max –– 30 65 –– 5.0 –– 6 ±100 –– 25 150 –– –– 250 65 120 75 75 135 75 1.5 250 –– –– –– –– –– –– –– –– Units V mΩ BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Q gd td(on) tr td(off) tf VSD trr1 Irm1 Qrr1 trr2 Irm2 Qrr2 Ciss Coss Crss V nA μA μA μA Mho nC Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage nsec V nsec A μC nsec A μC pF Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N20 Series TO-254Z (Z) TO-254 (M) TO-258 (N) TO-259 (P) PIN ASSIGNMENT (Standard) Package Drain Source Pin 1 Pin 2 TO-254 (M) Pin 1 Pin 2 TO-254Z (Z) Pin 1 Pin 2 TO-258 (N) Pin 1 Pin 2 TO-259 (P) Gate Pin 3 Pin 3 Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC
SFF80N20
### 物料型号 - 型号:SFF80N20 - 封装类型:TO-254(M)、TO-254Z(Z)、TO-258(N)、TO-259(P)

### 器件简介 SFF80N20系列是一款80安培、200伏特、25毫秒雪崩额定的N沟道MOSFET。具有坚固的多晶硅栅极、行业内最低的导通电阻、雪崩额定、密封和隔离封装、低总栅极电荷、快速开关等特点。

### 引脚分配 - TO-254(M):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3 - TO-254Z(Z):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3 - TO-258(N):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3 - TO-259(P):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3

### 参数特性 - 漏源电压:200V - 栅源电压:连续瞬态 +20V ±30V - 最大连续漏电流:55A(取决于封装) - 最大瞬态漏电流:80A(25°C时)和48A(175°C时) - 最大雪崩电流:60A - 单次和重复雪崩能量:1500mJ和50mJ(0.1mH时)

### 功能详解 该器件具有低导通电阻、快速开关特性和雪崩额定,适用于需要高电流和高电压的应用场合。具体电气特性包括漏源击穿电压、导通电阻、栅阈值电压、栅源漏电流、零栅压漏电流、前向跨导、总栅电荷等。

### 应用信息 SFF80N20系列适用于需要高电流和高电压的电力电子应用,如开关电源、电机控制和太阳能逆变器等。

### 封装信息 - TO-254(M):直引脚封装 - TO-254Z(Z):下弯引脚封装 - TO-258(N):另一种封装形式 - TO-259(P):上弯引脚封装
SFF80N20 价格&库存

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