Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF80N20 Series
80 AMP , 200 Volts, 25 mΩ Avalanche Rated N-channel MOSFET
Features:
Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF80N20 ___ ___ ___
│ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └
Screening 2/
__ = Not Screened TX = TX Level TXV = TXV Level S = S Level
Lead Option
3/
Package 3/ 4/
M = TO-254 Z = TO-254Z
__ = Straight Leads DB = Down Bend UB = Up Bend N = TO-258 P = TO-259
Maximum Ratings5/ Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case)
TO-254 (M) TO-254Z (Z) continuous transient
Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC
TO-258 (N)
Value 200 ±20 ±30 55 80 48 60 1500 50 150 -55 to +175 1.0 (typ.0.75)
Units V V A A A mJ W ºC ºC/W
@ TC = 25ºC @ TC = 25ºC @ TC = 175ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC
TO-259 (P)
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF80N20 Series
Symbol
VGS = 0V, ID = 250μA VGS = 10V, ID = 48A, Tj= 25 C VGS = 10V, ID = 48A, Tj=125oC VGS = 10V, ID = 48A, Tj= 175oC VDS = VGS, ID = 4.0mA, Tj= 25oC VDS = VGS, ID = 4.0mA, Tj= 125oC VDS = VGS, ID = 4.0mA, Tj= -55oC VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 200V, VGS = 0V, Tj = 25oC VDS = 200V, VGS = 0V, Tj = 125oC VDS = 200V, VGS = 0V, Tj = 150oC VDS = 10V, ID = 48A, Tj = 25oC VGS = 10V VDS = 100V ID = 48A VGS = 10V VDS = 100V ID = 48A RG = 4.0Ω, pw= 3us IF = 48A, VGS = 0V IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz
o
Electrical Characteristics5/
Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage
Min
200 –– –– –– 2.5 1.5 –– –– –– –– –– –– 25 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– ––
Typ
220 25 50 65 4.5 3.6 5 10 30 0.01 2.5 25 50 150 45 75 50 50 110 50 0.90 190 11 1 310 17 2.5 5300 1050 175
Max
–– 30 65 –– 5.0 –– 6 ±100 –– 25 150 –– –– 250 65 120 75 75 135 75 1.5 250 –– –– –– –– –– –– –– ––
Units
V mΩ
BVDSS RDS(on)
VGS(th) IGSS IDSS gfs Qg Qgs Q gd td(on) tr td(off) tf VSD trr1 Irm1 Qrr1 trr2 Irm2 Qrr2 Ciss Coss Crss
V nA μA μA μA Mho nC
Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage
nsec V nsec A μC nsec A μC pF
Diode Reverse Recovery Time Reverse Recovery Charge
Input Capacitance Output Capacitance Reverse Transfer Capacitance
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF80N20 Series
TO-254Z (Z)
TO-254 (M)
TO-258 (N)
TO-259 (P)
PIN ASSIGNMENT (Standard) Package Drain Source Pin 1 Pin 2 TO-254 (M) Pin 1 Pin 2 TO-254Z (Z) Pin 1 Pin 2 TO-258 (N) Pin 1 Pin 2 TO-259 (P)
Gate Pin 3 Pin 3 Pin 3 Pin 3
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC