SFF80N20ZDBTXV

SFF80N20ZDBTXV

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SFF80N20ZDBTXV - Avalanche Rated N-channel MOSFET - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SFF80N20ZDBTXV 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N20 Series 80 AMP , 200 Volts, 25 mΩ Avalanche Rated N-channel MOSFET Features:        Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF80N20 ___ ___ ___ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ Package 3/ 4/ M = TO-254 Z = TO-254Z __ = Straight Leads DB = Down Bend UB = Up Bend N = TO-258 P = TO-259  Maximum Ratings5/ Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC TO-258 (N) Value 200 ±20 ±30 55 80 48 60 1500 50 150 -55 to +175 1.0 (typ.0.75) Units V V A A A mJ W ºC ºC/W @ TC = 25ºC @ TC = 25ºC @ TC = 175ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC TO-259 (P) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N20 Series Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 48A, Tj= 25 C VGS = 10V, ID = 48A, Tj=125oC VGS = 10V, ID = 48A, Tj= 175oC VDS = VGS, ID = 4.0mA, Tj= 25oC VDS = VGS, ID = 4.0mA, Tj= 125oC VDS = VGS, ID = 4.0mA, Tj= -55oC VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 200V, VGS = 0V, Tj = 25oC VDS = 200V, VGS = 0V, Tj = 125oC VDS = 200V, VGS = 0V, Tj = 150oC VDS = 10V, ID = 48A, Tj = 25oC VGS = 10V VDS = 100V ID = 48A VGS = 10V VDS = 100V ID = 48A RG = 4.0Ω, pw= 3us IF = 48A, VGS = 0V IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz o Electrical Characteristics5/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Min 200 –– –– –– 2.5 1.5 –– –– –– –– –– –– 25 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 220 25 50 65 4.5 3.6 5 10 30 0.01 2.5 25 50 150 45 75 50 50 110 50 0.90 190 11 1 310 17 2.5 5300 1050 175 Max –– 30 65 –– 5.0 –– 6 ±100 –– 25 150 –– –– 250 65 120 75 75 135 75 1.5 250 –– –– –– –– –– –– –– –– Units V mΩ BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Q gd td(on) tr td(off) tf VSD trr1 Irm1 Qrr1 trr2 Irm2 Qrr2 Ciss Coss Crss V nA μA μA μA Mho nC Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage nsec V nsec A μC nsec A μC pF Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N20 Series TO-254Z (Z) TO-254 (M) TO-258 (N) TO-259 (P) PIN ASSIGNMENT (Standard) Package Drain Source Pin 1 Pin 2 TO-254 (M) Pin 1 Pin 2 TO-254Z (Z) Pin 1 Pin 2 TO-258 (N) Pin 1 Pin 2 TO-259 (P) Gate Pin 3 Pin 3 Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC
SFF80N20ZDBTXV
### 物料型号 - 型号:SFF80N20

### 器件简介 - 描述:80安培,200伏特,25毫秒雪崩额定值的N沟道MOSFET。

### 引脚分配 - TO-254(M):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3 - TO-254Z(Z):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3 - TO-258(N):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3 - TO-259(P):漏极(Drain) - Pin1,源极(Source) - Pin2,栅极(Gate) - Pin3

### 参数特性 - 最大额定值: - 漏极-源极电压(Vpss):200V - 栅极-源极电压(VGs):+20V ±30V - 最大连续漏极电流(ID1):55A(25°C时) - 最大瞬时漏极电流(ID2, ID3):80A(25°C时),48A(175°C时) - 最大雪崩电流(IAR):60A - 单次和重复雪崩能量(EAS, EAR):1500mJ, 50mJ - 最大总功耗(Po):150W - 工作和存储温度(TOP & TSTG):-55°C至+175°C - 最大热阻(ReJc):1.0°C/W(典型值0.75°C/W)

### 功能详解 - 特点: - 坚固的多晶硅栅极 - 行业内最低的导通电阻 - 雪崩额定值 - 密封、隔离的封装 - 低总栅极电荷 - 快速开关 - 提供TX, TXV, S级筛选 - 改进的(RonQ)性能指标

### 应用信息 - 应用:文档中未明确提及具体应用,但根据其参数和特性,适用于需要高电流、高电压和快速开关的应用,如电源管理、电机控制等。

### 封装信息 - 封装类型:TO-254(M), TO-254Z(Z), TO-258(N), TO-259(P)
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