SFT1192

PRELIMINARY SFT1192 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCEO 400V. Fast Switching. High Frequency. Low Saturation Voltage. 200oC Operating, Gold Eutectic Die Attach. Designed for Complementary Use with SFT6800. TO-5 2 AMP 500 VOLTS PNP TRANSISTOR MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC=100oC Derate above 100oC Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-5 SYMBOL VCEO VCBO VEBO IC IB PD TJ, TSTG R2JC VALUE 400 500 10 2 0.5 6 150 -65 to +200 15 UNITS Volts Volts Volts Amps Amps W mW/oC o C o C/W COLLECTOR BASE EMITTER NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0004B PRELIMINARY SFT1192 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5mADC) Collector-Base Breakdown Voltage (IC = 100uADC) Emitter-Base Breakdown Voltage (IE = 20uADC) Collector Cutoff Current (VCB = 450VDC) Collector Cutoff Current (VCE = 400VDC, VEB = 1.5VDC) Emitter Cutoff Current (VEB = 6VDC) DC Current Gain* (VCE =10VDC) (IC = 1.0mADC) (IC = 50mADC) (IC = 500mADC) SYMBOL BVCEO BVCBO BVEBO ICBO ICEV IEBO MIN 400 500 10 80 60 40 50 - MAX 1.0 10 10 0.4 1.0 1.5 2.0 75 300 250 2500 UNITS V V V uA uA uA HFE Collector-Emitter Saturation (IC =50mADC, IB = 5mADC) Voltage* (IC =500mADC, IB =50mADC) Base-Emitter Saturation Voltage* (IC =50mADC, IB = 5mADC) (IC =500mADC, IB =50mADC) VCE(SAT) VBE (SAT) fT Cob Cib t(on) t(off) VDC VDC MHz pf pf ns ns Current Gain Bandwidth Product (IC = 70mADC , VCE = 30VDC, f = 20MHz) Output Capacitance (VCB= 20VDC , IE = 0ADC, f = 1.0MHz) Input Capacitance (VBE= 2VDC , IC = 0ADC, f = 1.0MHz) Turn On Time Turn Off Time (VCC = 100VDC , IC = 500mADC, VEB(OFF)=3.7VDC, IB1=IB2= 50mADC) *Pulse Test: Pulse Width = 300us, Duty Cycle = 2%