SFT1192S.5

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT1192S.5 2 AMP 500 VOLTS PNP TRANSISTOR SMD.5 DESIGNER’S DATA SHEET FEATURES: • • • • • • BVCEO 400 V minimum Fast Switching: 250 ns max t(on) High Frequency: minimum 50 MHz Low Saturation Voltage 200oC Operating, Gold Eutectic Die Attach Designed for Complementary Use with SFT6800 MAXIMUM RATINGS Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 175 C Derate above 175oC Operating and Storage Temperature Range Thermal Resistance, Junction to Case FIGURE 1: OUTLINE AND DIMENSIONS .304 .288 3x .020 .010 .030 MIN o Symbol VCEO VCBO VCEO IC IB PD TJ & TSTG RθJC Value 400 500 10 2 0.5 5 200 -65 to +200 5.0 Units Volts Volts Volts Amps Amps W mW/ºC ºC ºC/W 2x .103 .087 .030 MIN .408 .392 .128 .112 All dimensions are in inches Tolerances: (unless otherwise specified) XX: ±0.01” XXX: ±0.005” PACKAGE OUTLINE: SMD.5 PINOUT: Pin 1: Collector Pin 2: Emitter Pin 3: Base .233 .217 2x .010 MAX .304 .288 .135 .115 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0082A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT1192S.5 Symbol BVCEO BVCBO BVEBO ICBO ICEV IEBO (IC = 1.0 mADC) (IC = 50 mADC) (IC = 500 mADC) HFE ELECTRICAL CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 5 mA) Collector – Base Breakdown Voltage (IC = 100 µADC Emitter – Base Breakdown Voltage (IE = 20 µADC) Collector Cutoff Current (VCB = 450 VDC) Collector Cutoff Current (VCE = 400 VDC, VEB = 1.5 VDC) Emitter Cutoff Current (VEB = 6 VDC) DC Current Gain* (VCE = 10 VDC) Collector – Emitter Saturation Voltage* (IC = 50 mADC, IB = 5 mADC) (IC = 500 mADC, IB = 50 mADC) Base – Emitter Saturation Voltage* (IC = 50 mADC, IB = 5 mADC) (IC = 500 mADC, IB = 50 mADC) Current Gain Bandwidth Product (IC = 70 mADC, VCE = 30 VDC , f = 20 MHz) Output Capacitance (VCB = 20 VDC, IE = 0 ADC , f = 1.0 MHz) Input Capacitance (VEB = 2 VDC, Ic = 0 ADC , f = 1.0 MHz) Turn On Time Turn Off Time (VCC = 100 VDC, IC = 500 mADC , VEB(OFF) = 3.7 VDC IB1 = IB2 = 50 mADC Min 400 500 10 –– –– –– Max –– –– –– Units V V V µA µA µA 1.0 10 10 –– –– –– 80 60 40 –– VCE (SAT) 0.4 1.0 1.5 2.0 –– VDC VBE (SAT) fT Cob Cib t(on) t(off) –– VDC MHz pf pf ns ns 50 –– –– –– –– 75 300 250 2500 * Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2% For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0082A DOC