SFT2010

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2010 thru SFT2014 200 AMP 100 – 140 Volt High Energy NPN Transistor • • • • • • • • DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT __ __ __ __ │ │ │ └ Screening 2/ __ = No Screening │││ TX = TX Level │││ TXV = TXV Level │││ S = S Level │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ │ └ Package 3/ /3 = TO-3 0.060” pin └ Voltage/Family 2010 = 100V Features: BVCBO = 250 V MIN 600 Watts Power Dissipation Excellent SOA Curve Es/b of 800mJ Gain of over 5 at 200A High Reliability Construction Planar Chip Construction with Low Leakage and Very Fast Switching TX, TXV, S-Level Screening Available2/ Consult Factory 2012 = 120V 2014 = 140V Maximum Ratings Collector – Emitter Voltage SFT2010 SFT2012 SFT2014 Symbol VCEO VCBO VEBO IC IB TC=50ºC Derate above 50ºC PD TJ & TSTG R0JC TO-3 Value 100 120 140 250 8 200 75 600 4 -65 to +200 0.25 Units Volts Volts Volts Amps Amps Watts W/ ºC ºC ºC/W Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only. 5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0108A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2010 thru SFT2014 Symbol (IC = 200 mA) SFT2010 SFT2012 SFT2014 (IC = 100μA) (IE = 100μA) (VCB = 250 V) (VEB = 7 V) IC = 10 A, VCE = 2 V IC = 100 A, VCE = 5 V IC = 200 A, VCE = 5 V (IC = 120 A, IB = 12 A) (IC = 200 A, IB = 30 A) (IC = 120 A, IB = 12 A) (IC = 1.0 A, VCE = 10 V, f = 10MHz) VCB = 10 V, IE = 0, f = 1.0MHz IB = 1 A, RB1 = RB2 = 20 ohms VBE(off) = 2.0 V, L = 1.0 mH VCE= 20 V, IC= 30 A VCE= 100 V, IC= 0.75 A Electrical Characteristics Collector – Emitter Breakdown Voltage * Collector – Base Breakdown Voltage * Emitter – Base Breakdown Voltage * Collector Cutoff Current Emitter Cutoff Current DC Current Gain * Min 100 120 140 250 8 –– –– 40 30 5 –– –– –– 30 –– 800 1 1 –– –– –– Max –– –– –– 10 10 –– –– –– 2.0 3.0 2.2 –– 1200 –– –– –– 800 1500 400 Units Volts Volts Volts μA μA BVCEO BVCBO BVEBO ICBO IEBO hFE VCE (SAT) VBE (SAT) fT Cob Es/b Is/b t(on) Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current – Gain – Bandwidth Product Output Capacitance RB SOA FB SOA On Time Storage Time Fall Time Volts Volts Mhz pF mJ sec ns ns ns (VCC = 60 V, IC = 10 A, IB1 = IB2 = 1.0 A) ts tf 1 .135 MAX 2x Ø.165 .151 SEATING PLANE NOTES: 1 .525 MAX .675 .655 2x R.188 MAX Available Part Numbers: SFT2010/3 SFT2012/3 SFT2014/3 2x .063 .057 2 Ø.875 MAX .440 .420 2x .225 .205 THIS DIMENSION SHALL BE MEASURED AT POINTS .050 - .055" BELOW THE SEATING PLANE. WHEN GAGE IS NOT USED, MEASUREMENT WILL BE MADE AT SEATING PLANE. THIS OUTLINE DOES NOT MEET THE MINIMUM CRITERIA ESTABLISHED BY JS-10 FOR REGISTRATION. 1 .450 .250 2x .312 MIN 1.197 1.177 Package TO-3 (/3) PIN ASSIGNMENT (Standard) Collector Emitter Base Case Pin 2 Pin 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0108A DOC