SFT210DE

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT210DE 50 mA, 30 Volt, 1 nsec High Speed Analog N-Channel DMOSFET switch • • • • • • • DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT210 DE __ ││ ││ 2/ │ └ Screening __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package DE = TO-72 Features: Ultra-High Speed Switching – tON = 1 ns Ultra-Low Reverse Capacitance: 0.2pF Low Guaranteed rDS @ 5V Low Turn-On Threshold Voltage N-Channel Enhancement Mode Replacement for SD210DE TX, TXV, and S-Level Screening Available. Consult 2/ Factory. Maximum Ratings Drain – Source Breakdown Voltage Source – Drain Voltage Gate - Drain Voltage Gate - Source Voltage Gate – Body (substrate) Voltage Drain – Body (substrate) Voltage Source – Body (substrate) Voltage Drain Current Power Dissipation Maximum Thermal Resistance Lead Temperature TA= 25 C TC= 25oC Junction to Ambient Junction to Case o Symbol VDS VSD VGD VGS VGb VDb VSb ID PD RΘJA RΘJC TL TOP TSTG Max 30 10 +40 +40 +30 30 15 50 300 1.2 335 85 300 -55 to +125 -65 to +150 Units Volts Volts Volts Volts Volts Volts mA mWatts Watts ºC/W ºC ºC ºC (1/16” from case for 10 seconds) Operating & Storage Temperature PACKAGE OUTLINE: TO-72 PIN ASSIGNMENT PIN 1 PIN 2 PIN 3 PIN 4 Source Drain Gate Body (Substrate) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0035A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT210DE Symbol VGS = VBS = 0 V, ID = 10μA VGS = VBS = -5 V, ID = 10nA VGD = VBD = -5 V, IS = 10nA VGB = 0 V, ID = 10nA, Source Open VGB = 0 V, IS = 10μA, Drain Open VGS = 5 V VGS = 10 V VGS = 15 V VGS = 20 V VGS = 25 V VGS = VBS = -5V VGD = VBD = -5V VDS = 10V VDS = 20V VSD = 10V VSD = 20V V(BR)DS V(BR)SD V(BR)DBO V(BR)SBO Electrical Characteristics 3/ Drain – Source Breakdown Voltage Source – Drain Breakdown Voltage Drain – Substrate Breakdown Voltage Source – Substrate Breakdown Voltage Typ 35 30 22 35 35 58 38 30 26 24 0.5 1.0 0.5 0.8 0.001 0.8 11 0.9 2.5 1.1 3.7 0.2 0.5 0.6 2 6 Min 30 10 10 15 15 ----------0.5 10 ---------- Max Units ----70 45 ---10 -10 -0.1 2.0 --3.5 1.5 5.5 0.5 1 1 --Volts Volts Volts Volts Drain – Source ON State Resistance (ID = 1 mA, VSB = 0 V) rDS(ON) Ohms Drain – Source Leakage Source – Drain Leakage Gate Leakage Threshold Voltage Forward Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time IDS(off) ISD (off) IGBS VGS(th) gfs gos C(GS+GD+GB) C(GD+GB) C(GS+SB) Crss (CDG) td (on) tr td (off) tf nA nA nA Volts mS pF pF pF pF ns ns ns ns VDB = VSB = 0 V, VGB = ±40V VDS = VGS, ID = 1μA, VSB =0V VDS = 10V, VSB = 0 V , ID = 20mA, f = 1 kHz VDS = 10V, f = 1MHz VGS = VBS = -15V VSB = 0 V, VIN 0 to 5 V, R G = 25 Ω VDD = 5 V, RL = 680 Ω NOTES: * Pulse Test: Pulse Width = 100 μsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC . NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0035A DOC