SFT2222A2

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2222A2 Series Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor Features: • • • • • • High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 660 mW Replacement for 2N2222AU TX, TXV, S-Level Screening Available 2/ NPN Complimentary Parts Available (SFT2907A2) DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT2222A2 __ __ │ └ Screening 2/ __= Commercial │ TX= TX Level │ TXV= TXV Level │ S= S Level │ └ Package GW= Gullwing Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Power Dissipation @ TA= 25ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) Gullwing (GW) 6x .030 2x .050 (=.100) .015 6x .010 Symbol VCEO VCBO VEBO IC Per Device Total PD TOP & Tstg RθJ-PCB 3x .015 Value 50 75 6 800 500 660 -65 to +200 265 Units Volts Volts Volts mA mW ºC ºC/W PIN 6 PIN 4 PIN 4 .015±.010 .107 .125 .193 5x R.018 PIN 6 .034 PIN 1 PIN 3 .025 PIN 3 PIN 1 .040 ±.010 Tolerances: .xx ±.01 .xxx ±.005 .107 .130 .010 .035 6x R.010 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0030E SSDI .350 ±.010 .033 DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2222A2 Series Electrical Characteristic 4/ Collector – Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio 5/ IC= 10 mA VCE= 50 V VCB= 60 V VCB= 75 V VCB= 60 V, TA= 150ºC VEB= 4.0 V VEB= 6.0 V VCE= 10 V, IC= 0.1 mA VCE= 10 V, IC= 1.0 mA VCE= 10 V, IC= 10 mA VCE= 10 V, IC= 150 mA VCE= 10 V, IC= 500 mA VCE= 10 V, IC= 10 mA, TA= -55ºC VCE= 10 V, IC= 1.0 mA, f= 1 kHz IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA VCC= 30 V, IC= 150 mA IB1= IB2= 15 mA, VBE(off)= 3 V VCE= 10 V, f= 1MHz VCE= 0.5 V, f= 1MHz Symbol BVCEO ICES ICBO IEBO Min 50 –– –– –– 50 75 100 100 30 35 50 –– –– 0.6 –– 250 –– –– –– –– Max –– 50 0.01 10 10 0.01 10 –– 325 — 300 –– –– — 0.3 1.0 1.2 2.0 –– 35 300 8.0 25 Units Volts nA µA µA HFE Small-signal Forward Current Transfer Ratio Collector – Emitter Saturation Voltage 5/ Base – Emitter Saturation Voltage 5/ Frequency Transition Switching Times Output Capacitance Input Capacitance hfe VCE(Sat) VBE(Sat) fT ton toff cob cib Volts Volts MHz ns pF pF VCE= 20 V, IC= 20 mA, f= 100 MHz NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @ 25ºC. 5/ Pulse Test: Pulse Width= 300µsec, Duty Cycle= 2% Available Part Numbers: SFT2222A2GW Package GW Pin 1 Collector1 PIN ASSIGNMENT Pin 2 Base1 Pin 3 Emitter1 Pin 4 Collector2 Pin 5 Base2 Pin 6 Emitter2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0030E DOC