SFT2369A2GW

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2369A2 Series Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor Features: • • • • • High Speed Switching Transistor Suitable in chopper, UHF and RF application Multiple Devices Reduce Board Space Replacement for 2N2369AU TX, TXV, S-Level Screening Available 2/ DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT2369A2 __ __ │ └ Screening 2/ __= Commercial │ TX= TX Level │ TXV= TXV Level │ S= S Level │ └ Package GW= Gullwing Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Power Dissipation @ TA= 25ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) Gullwing (GW) 6x .030 2x .050 (=.100) .015 6x .010 Symbol VCEO VCBO VEBO IC Per Device Total PD TOP & Tstg RθJ-PCB 3x .015 Value 15 40 4.5 100 360 500 -65 to +200 350 Units Volts Volts Volts mA mW ºC ºC/W PIN 6 PIN 4 PIN 4 .015±.010 5x R.018 .107 .125 .193 PIN 6 .034 PIN 1 PIN 3 .025 PIN 3 PIN 1 .040 ±.010 Tolerances: .xx ±.01 .xxx ±.005 .107 .130 .010 .035 6x R.010 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045B SSDI .350 ±.010 .033 DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2369A2 Series Electrical Characteristic 4/ Collector – Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current IC= 10 mA Symbol BVCEO ICEX ICBO IEBO Min 15 — — — 40 30 40 20 20 — — — — 0.7 — 0.8 — 0.59 500 — — — — Max — 0.4 30 0.2 10 30 0.25 10 120 120 120 120 — 0.20 0.25 0.45 0.30 0.85 0.9 1.2 1.02 — 1000 4.0 5.0 12 18 13 Units Volts µA µA µA VCE= 20 V, VBE= 0 V VCE= 10 V, VBE= 0.25 V, TA= 125ºC VCB= 32 V VCB= 40 V VCB= 20 V, TA= 150ºC VEB= 4.0 V Emitter Cutoff Current VEB= 4.5 V DC Forward Current Transfer Ratio 5/ VCE= 0.35 V, IC= 10 mA VCE= 0.40 V, IC= 30 mA VCE= 1.0 V, IC= 10 mA VCE= 1.0 V, IC= 100 mA VCE= 1.0 V, IC= 10 mA, TA= -55ºC Collector – Emitter Saturation Voltage 5/ IC= 10 mA, IB= 1.0 mA IC= 30 mA, IB= 3.0 mA IC= 100 mA, IB= 10 mA IC= 10 mA, IB= 1.0 mA, TA= 125ºC 5/ Base – Emitter Saturation Voltage IC= 10 mA, IB= 1.0 mA IC= 30 mA, IB= 3.0 mA IC= 100 mA, IB= 10 mA IC= 10 mA, IB= 1.0 mA, TA= -55ºC IC= 10 mA, IB= 1.0 mA, TA= 125ºC Frequency Transition Output Capacitance Input Capacitance Switching Times VCE= 20V, IC= 20mA, f= 100 MHz VCE= 5 V, f= 1 MHz VCE= 0.5 V, f= 1 MHz HFE VCE(Sat) Volts VBE(Sat) Volts fT cob cib ton toff ts MHz pF pF ns Test Circuit per MIL-PRF-19500/317 NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @ 25ºC. 5/ Pulse Test: Pulse Width= 300µsec, Duty Cycle= 2% Available Part Numbers: SFT2369A2GW Package GW Pin 1 Collector1 PIN ASSIGNMENT Pin 2 Base1 Pin 3 Emitter1 Pin 4 Collector2 Pin 5 Base2 Pin 6 Emitter2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045B DOC