SFT3439S.22

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT3439S.22 1 A /450 Volts NPN Switching Transistor Features: • Switching Transistor • Small Footprint Surface Mount Device with Excellent Thermal Properties • Replacement/Enhancement for 2N3439UA • TX, TXV, S-Level Screening Available • PNP Complimentary Parts Available DESIGNER’S DATA SHEET SMD.22 Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Power Dissipation @ TC = 25ºC Power Dissipation @ TC = 25ºC Operating & Storage Temperature Maximum Thermal Resistance Note1: Derated 133 mW/°C above Tc = 162.5°C Note2: Derated 4 mW/°C above TA= 25°C Note 1 Note 2 Symbol VCEO VCBO VEBO IC PD Top & Tstg Junction to Case Junction to Ambient RθJC RθJA Value 350 450 7 1 5 0.7 -65 to +200 7.5 (typ 5) 250 Units Volts Volts Volts Amps W ºC ºC/W PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE .220±.007 .065±.010 3 .134 .030 1 2 .140 .150 ±.007 .052 .070 .090 .005 TYP NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0086A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT3439S.22 Symbol VCB = 360 V VCB = 450 V VCB = 360 V, TA= 150ºC VCE = 300 V VCE = 450 V, VBE= 1.5 V VEB = 7.0 V VCE = 10V, IC = 0.2 mA VCE = 10V, IC = 2 mA VCE = 10V, IC = 20 mA ICBO1 ICBO2 ICBO3 ICEO ICEX1 IEBO HFE1 HFE2 HFE4 HFE4 VCE(sat)1 VBE(sat)1 hfe hfe Cobo Cibo ton toff SOA1 SOA2 Electrical Characteristics 4/ Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio * Min –– –– –– –– –– –– 10 30 40 15 –– –– 3 25 –– –– –– –– Typ 0.05 0.1 –– 0.02 –– 0.01 65 90 115 30 0.23 0.75 5.5 110 8 35 –– –– Max 2 5 100 2 5 10 –– –– 160 –– 0.5 1.3 15 –– 10 75 1 10 Units µA µA µA µA VCE = 10V, IC = 20mA, Ta= -55ºC Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Frequency Transition (Small Signal Current Gain) @ f= 5 MHz Small Signal Current Gain @ f= 1 kHz Output Capacitance Input Capacitance Pulse Response Safe Operating Area IC = 50 mA, I = 4 mA IC = 50 mA, IB= 4 mA VCE = 10V, IC = 10mA, f = 5 MHz VCE = 10V, IC = 5mA, f = 1 kHz VCB = 10V, f = 1MHz VBE = 5V, f = 1MHz VCC = 200V, IC = 20mA, IB = 2mA VCE = 5V, IC = 1A, t = 1 s VCE = 350V, IC = 14 mA, t = 1 s V V pF pF µs NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0086A DOC