SFT390604A2

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT390604A2 Series Dual Microminiature Package 800 mA 75 Volts NPN/PNP Transistor Features: • • • • • High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 600 mW / device TX, TXV, S-Level screening available Replaces both 2N3906AU (PNP) & 2N3904AU(NPN) in one package PNP Value NPN Value DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT390604A2 __ __ │ └ Screening 2/ __ = Commercial │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package GW = Gullwing Maximum Ratings (per device) Symbol Units Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continues Collector Current Power Dissipation @ TC = 25ºC Operating & Storage Temperature VCEO VCBO VCBO IC PD Top & Tstg RθJC 40 40 6 200 600 -65 to +200 0.29 40 60 6 200 600 -65 to +200 0.29 Volts Volts Volts mAmps mW ºC ºC/mW Maximum Thermal Resistance (Junction to Case) Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0036 B Doc Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT390604A2 Series Symbol PNP Limit NPN Limit Units Electrical Characteristic 4/ 5/ Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio * IC = 1 mA IC = 10 µA IC = 10 µA Vce = 30 V, Vbe = 3.0 V Vcb = -30 V Veb = -3.0 V VCE = 1.0V, IC = 0.1 mA VCE = 1.0V, IC = 1.0 mA VCE = 1.0V, IC = 10 mA VCE = 1.0V, IC = 50 mA VCE = 1.0V, IC = 100 mA BVCEO BVCBO BVEBO ICEX ICBO IEBO 40 min 40 min 5 min 50 max 50 max 50 max 60 min 80 min 100 - 300 60 min 30 min 40 min 60 min 5 min 50 max 50 max 50 max 40 min 70 min 100 - 300 60 min 30 min V V V nA nA nA HFE Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Frequency Transition Output Capacitance Input Capacitance Turn-on Delay Time Rise Time Switch Times Storage Time Fall Time Small Signal Current Gain (f = 1 khz ) Noise Figure IC = 10mA, IB = 1.0mA VCE(Sat) IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA VBE(Sat) IC = 50mA, IB = 5.0mA VCE = 20V, IC = 20mA VCE = 10V, f = 1MHz VCE = 0.5V, f = 1MHz Vcc=3V, IC = 10 mA IB1 = 1mA, IB2=-1mA Vbe(off) = 0.5 V VCE = 10V, IC = 1.0 mA fT cob cib td tr ts tf hfe NF 0.25 max 0.20 max 0.40 max 0.30 max 0.65 to 0.85 0.65 to 0.85 0.95 max 0.95 max 250 min 4.5 max 10 max 35 max 35 max 225 max 75 max 100 - 400 4.0 max 300 min 4.0 max 8.0 max 35 max 35 max 200 max 50 max 100 - 400 5.0 max V V MHz pF pF nsec Ic = 100 uA, Vce = 5 V, Rs = 1.0 kΩ, f = 1 khz db NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 5/ Negative bias conditions for the PNP device type PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 PNP Device Base Emitter Collector Available Part Numbers: SFT390604A2GW Package GW Pin 1 Collector Pin 5 NPN Device Base Pin 6 Emitter