SFT4100

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT4100 Series 15 AMP DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT4100 __ __ │ └ Screening 2/ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package 3/ /3 = TO-3 HIGH SPEED NPN TRANSISTOR 200 VOLTS Features: • Fast Switching, tf = 60 nsec typ. • Very Low Leakage and Saturation • BVCEO 165 Volts Min • High Linear Gain • 200ºC Operating Temperature • Gold Eutectic Die Attach • Available in hermetic isolated and “hot case” power packages • Higher Current Devices Available S1 = SMD1 M = TO254 Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continues Collector Current Base Current Power Dissipation @ TC = 25ºC Operating & Storage Temperature Symbol VCEO VCBO VEBO IC IB PD Top & Tstg Junction to Case RθJC Value 165 250 7 15 3 120 -65 to +200 1.46 Units Volts Volts Volts Amps Amps W ºC ºC/W Maximum Thermal Resistance NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening to MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. TO-3 SMD1 TO-254 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0105B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT4100 Series Symbol IC = 200mA IC = 200µA IE = 50mA VCE = 160 V VCE = 250 V, VEB = 1.5 V VCE =250V, VEB =1.5V, TC= 125C VEB = 5 V VCE = 4V, IC = 5A VCE = 4V, IC = 8A IC = 5.0A, IB = 500mA IC = 8.0A, IB = 1.0A IC = 8.0A, IB = 1.0A VCE = 15V, IC = 1.0A, f = 10MHz VClamp = 200V, L = 500 uH VCE = 30V, IC = 4.0A, t = 1s VCE = 135V, IC = 0.15A, t= 1s VCC = 150V, IC = 8A, IB1 = IB2 = 1A SOA1 SOA2 tON tS tf –– –– –– SMD1 100 1200 60 1000 1700 800 nsec nsec nsec BVCEO BVCBO BVEBO ICEO ICEX IEBO hFE VCE(Sat) VBE(Sat) fT Min 165 7 –– –– –– 15 8 –– –– –– 8 8 T yp 200 250 15 0.03 0.01 1.0 0.01 30 30 0.25 0.35 1.12 20 Max –– –– –– 1000 1000 5000 1000 45 –– 1.2 1.6 2.0 –– Units Volts Volts Volts uA uA uA –– Volts Volts MHz A Electrical Characteristic 4/ Collector – Emitter Breakdown Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Cutoff Current Collector – Cutoff Current Emitter – Cutoff Current DC Current Gain * Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Current Gain Bandwidth Product Clamped ES/B Collector Current Safe Operating Area ON Time Storage Time Fall Time CASE OUTLINES: TO-3 TO-254 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0105B DOC