SFT4959

PRELIMINARY SFT4959 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 Designer's Data Sheet FEATURES: • • • • PNP Silicon Annular Transistor High Speed High Frequency Low Noise 30mA 18 VOLTS PNP TRANSISTOR TO-72 Maximum Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current T otal Device Dissipation @ TC=100 oC Derate above 100 oC Operating and Storage Temperature Thermal Resistance, Junction to Case SYMBOL VCEO VCBO VEBO IC PD TJ, TSTG R2JC VALUE 18 25 3 30 .2 1.14 - 65 to +200 .87 UNITS Volts Volts Volts mA W mW/oC o C o C/mW NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0001A PRELIMINARY SFT4959 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 SOLID STATE DEVICES, INC. MIN 18 25 3 20 1000 MAX 0.1 200 0.8 MHz pF UNITS V V V uA Electrical Characteristics * Collector-Emitter Breakdown Voltage ( I C = 1mAdc) Collector-Base Breakdown Voltage ( I C = 0.1mAdc) Emitter-Base Breakdown Voltage ( I E = 0.1mAdc) Collector Cutoff Current ( V CB = 10Vdc) Forward Current Transfer Ratio ( I C =2mA, V CE =10Vdc) Current Gain Bandwidth Product ( I C = 10mA, V CE =10Vdc , f = 100 MHz) Collector-Base Capacitance ( V CB = 10 Vdc , I E =0 , f = 1 MHz ) *T J = 25oC ( Unless Otherwise Specified) SYMBOL BVCEO BVCBO BVEBO ICBO hFE fT Cob CASE OUTLINE: TO-72 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR PIN 4: CASE