SFT5001JDB

SFT5001 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT5001 __ __ __ __ │ │ │ └ Screening 2/ __ = Not Screened │││ TX = TX Level │││ TXV = TXV Level │││ S = S Level │││ │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ UB = Up Bend ││ DB = Down Bend │ └ Pin Out Configuration 5/ __ = Normal │ R = Optional │ └ Package 3/ /59 = TO-59 /66 = TO-66 J = TO-257 S.5 = SMD .5 5 AMPS 125 Volts High Speed PNP Transistor • • • • • • • Features: Radiation Tolerant Superior to JEDEC 2N5001 Series High Frequency, f T > 80MHz Very Low Saturation Fast Switching, 130 ns Max t(on) Designed for Complementary Use with SFT3997 TX, TXV, S-Level Screening Available. Consult Factory. Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage E mitter – Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 100ºC Derate Above 100ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Symbol VCEO VCBO VEBO IC IB PD TJ & TSTG R0JC Value 80 125 7 5 1 30 0.3 -65 to +200 3.33 Units Volts Volts Volts Amps Amps Watts W/ºC ºC ºC/W TO-59 (/59) TO-66 (/66) TO-257 (J) SMD .5 (S.5) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0099A DOC SFT5001 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Electrical Characteristics Collector – Emitter Blocking Voltage * Collector – Base Blocking Voltage E mitter – Base Blocking Voltage Collector Cutoff Current Collector Cutoff Current E mitter Cutoff Current DC Current Gain * (IC = 10 mA) (IC = 20 µA) (IE = 20 µA) (VCE = 40 V) (VCB = 100 V) (VEB = 6 V) (IC = 50 mA, VCE = 5 V) (IC = 1.0 A, VCE = 5 V) (IC = 5.0 A, VCE = 5 V) (IC = 1.0 A, IB = 100 mA) (IC = 5.0 A, IB = 500 mA) (IC = 1.0 A, IB = 100 mA) (IC = 5.0 A, IB = 500 mA) VCE = 5 V, IC = 0.5 A, f = 10 MHz VCB = 10 V, IE = 0 A, f = 1.0 MHz Symbol BVCEO BVCBO BVEBO ICEO ICBO IEBO hFE VCE (SAT) VB E (SAT) fT Cob t(on) t(off) td tr ts tf Min 80 125 7 –– –– –– 50 50 30 –– –– –– –– 80 –– –– –– –– –– Max –– –– –– 10 1.0 1.0 –– –– –– 0.5 1.0 0.9 1.2 –– 75 150 500 Units Volts Volts Volts μA μA μA Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain – Bandwidth Product Output Capacitance Delay Time Rise Time Storage Time Fall Time NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. Volts Volts MHz pF ns ns (VCC = 20 V, IC = 1.0 A, VBE (off) = 3.7 V, IB1 = IB2 = 100 mA, RL = 20 Ω) 4/ Up and Down Bend Configurations are Available for ‘J’ (TO257) Packages Only. 5/ Optional Pin Out Configurations are Available for ‘J’ (TO257) Packages Only. 6/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. PIN ASSIGNMENT (Standard) Package Collector Emitter TO-59 (/59) Pin 1 Pin 2 TO-66 (/66) Case Pin 2 TO-257 (J) Pin 1 Pin 2 SMD .5 (S.5) Pin 1 Pin 2 PIN ASSIGNMENT (Optional) Package Collector Emitter TO-257 (JR) Pin 2 Pin 3 Available Part Numbers: SFT5001/59 SFT5001/66 SFT5001J SFT5001JUB SFT5001JDB SFT5001JR SFT5001JRUB SFT5001JRDB SFT5001S.5 Base Pin 3 Pin 3 Pin 3 Pin 3 Base Pin 1