SFT501-J

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT501/J and SFT503/J SFT501/JC and SFT503/JC Series 5 AMP 200 Volts HIGH SPEED PNP Transistor Features: • • • • • • • • Fast Switching High Frequency, 80 MHz Typical BVCEO 150 Volts Min High Linear Gain Low Saturation Voltage and Leakage 200ºC Operating Temperature Gold Eutectic Die Attach Designed for Complementary Use with SFT502/G and SFT504/G DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT501 __ __ __ SFT503 __ __ __ │ │ └ Scre ening 2/ __ = Not Screen ││ TX = TX Level ││ TXV = TXV Level ││ S = S Level ││ ││ ││ │ └ Polarity: __ = Normal │ R = Reverse └ Package 3/ J = TO-257, glass seals JC = TO-257, ceramic seals Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continues Collector Current Base Current Power Dissipation @ TC = 50ºC Derate above 50ºC Operating & Storage Temperature Symbol VCEO VCBO VEBO IC IB PD Top & Tstg Junction to Case RθJC TO-257 Value 150 200 7 5 1 10 66.6 -65 to +200 15 Units Volts Volts Volts Amps Amps W mW/ºC ºC ºC/W Maximum Thermal Resistance NOTES: * P ulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbe rs: SFT501/J SFT501/JC SFT503/J SFT503/JC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT Code R Function Normal Reverse Pin 1 Collector Collector Pin 2 Emitter Base Pin 3 Base Emitter B17BH DATA SHEET #: TR0100A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT501/J and SFT503/J SFT501/JC and SFT503/JC Series Symbol IC = 50mA IC = 200µA IE = 200µA VCE = 100 V VCB = 100 V VEB = 6 V VCE = 5 V, IC = 50mA VCE = 5 V, IC = 2.5A VCE = 5 V, IC = 5 A VCE = 5 V, IC = 50mA VCE = 5 V, IC = 2.5A VCE = 5 V, IC = 5 A IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VCE = 5 V, IC = 0.5A, f = 10MHz VCB = 10V, IE = 0 A, f = 1MHz VBE = 10V, IC = 0 A, f = 1MHz BVCEO BVCBO BVEBO ICEO ICBO IEBO Min 150 200 7 –– –– –– 20 30 20 50 50 40 –– –– –– –– 40 –– –– –– –– –– –– T yp 200 275 13 –– –– –– –– –– 70 –– –– 70 0.35 0.6 1.0 1.2 60 130 450 25 40 320 130 Max –– –– –– 1.0 500 500 –– –– –– –– –– –– 0.75 1.5 1.3 1.5 –– 225 600 50 250 600 300 Units Volts Volts Volts µA nA nA Electrical Characteristic 4/ Collector – Emitter Breakdown Voltage Collector – Base Breakdown Voltage E mitter – Base Breakdown Voltage Collector – Cutoff Current Collector – Cutoff Current E mitter – Cutoff Current DC Current Gain * SFT501 SFT503 hFE –– Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time VCE(Sat) VB E(Sat) fT cob Cib td Volts Volts MHz pF pF nsec nsec nsec nsec VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A tr tS tf NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0100A DOC