SFT5014-5

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5013-4 & SFT5014-4 SFT5013/5 & SFT5014/5 SFT5013/39 & SFT5014/39 0.5 AMP, 800 – 900 Volts NPN Transistor FEATURES:       BVCER to 900 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200° C Operating, Gold Eutectic Die Attach 2N5010 thru 2N5012 Also Available, Contact Factory  TX, TXV, and S-Level Screening Available Symbol 5013 5014 5013 5014 VCER VCBO VEBO 5013 5014 BVCEO IC IB -4 /39 & /5 PD Value 800 900 800 900 5 300 400 0.5 250 1.0 2.0 20 2.0 20 -65 to +200 175 / 440 50 (typ 30) Units V V V V A mA W W mW/ºC W mW/ºC ºC ºC/W DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT50 __ │ │ │ │ │ │ │ └ __ │ │ │ │ │ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /39: TO-39 /5: TO-5 -4: LCC4 14 = 900V __ └ Family / Voltage 13 = 800V Maximum Ratings Collector – Emitter Voltage (RBE= 1 kΩ) Collector – Base Voltage Emitter – Base Voltage Collector – Emitter Breakdown Voltage Peak Collector Current Peak Base Current Total Device Dissipation @ TC= 25º C @ TA= 25º C Derate above TC= 25º C @ TC= 100º C Derate above TC= 100º C Operating and Storage Temperature Thermal Resistance, Junction to Case -4 /39 & /5 TOP, TSTG RθJC / RθJA RθJC Notes: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. 4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2% 4 PIN CLCC (LCC4) TO-39 TO-5 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031H DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5013-4 & SFT5014-4 SFT5013/5 & SFT5014/5 SFT5013/39 & SFT5014/39 Symbol 5013 5014 5013 5014 BVCER BVCBO BVEBO 5013 5014 5013 5014 Min 800 900 800 900 5 –– –– –– –– — 10 30 –– –– 20 –– –– –– –– –– PIN 2: BASE Electrical Characteristic 3/ Collector – Emitter Breakdown Voltage (IC = 200 µADC, RBE = 1 KΩ) Collector–Base Breakdown Voltage (IC = 200 µADC) Emitter–Base Breakdown Voltage (IE = 50 µADC) Collector Cutoff Current (VCB = 650 V) (VCB = 700 V) (VCB = 650 V, TC = 100°C) (VCB = 700 V, TC = 100°C) Emitter Cutoff Current (VEB= 4V) DC Current Gain 4/ (IC = 5 mADC, VCE = 10 VDC) (IC = 20 mADC, VCE = 10 VDC) Collector – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) Base – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) Current Gain Bandwidth Product (IC = 20 mADC, VCE = 10 VDC, f = 20 MHz) Output Capacitance (VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz) Delay Time Rise Time Storage Time Fall Time Case Outline: TO-5 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Typ Max –– –– Units V V V 11.5 –– 12 12 100 100 ICBO µAdc IEBO hFE VCE(Sat) VBE(Sat) fT Cob VCC= 125 VDC, IC= 100 mADC, IB1= 20 mADC, IB2= 20 mADC td tr ts tf 0.001 60 70 0.07 0.73 30 6.6 50 200 2200 400 20 180 1.6 1.0 –– 30 200 1200 3000 800 µA –– Vdc Vdc MHz pF nsec Case Outline: TO-39 PIN 1: EMITTER PIN 3: COLLECTOR Case Outline: 4 PIN CLCC (LCC4) PIN 1: COLLECTOR .225 .215 PIN 2: EMITTER .076 .060 PIN 3: BASE PIN 4: N/C .048 .032 .160 .145 3 .050 REF 4 1 4x .025 REF 2 PIN 1 INDENTIFIER .048 .032 .088 .072 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031H DOC