SFT5015-4

SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5013-4 thru SFT5015-4 0.5 AMP 800 - 1000 VOLTS NPN TRANSISTOR 4 PIN CLCC DESIGNER'S DATA SHEET FEATURES: • Low Profile Surface Mount Package • 200oC Operating Eutectic Die Attach • BVCER and BVCBO to 1000V • Low Leakage at High Temperature • High Gain, Low Saturation • TX, TXV and Space Level screening available • Designed for Complimentary Use with SFT5094-4 MAXIMUM RATINGS Collector - Emitter Voltage (RBE = 1kOhm) SFT5013-4 SFT5014-4 SFT5015-4 SFT5013-4 SFT5014-4 SFT5015-4 SYMBOL VCEO VCER VALUE 400 800 900 1000 800 900 1000 5 0.5 0.25 1.0 0.4 5.7 -55 to +200 175 440 UNIT V Collector - Base Voltage V CBO V EBO IC IB V V A A W mW/oC o Emitter - Base Voltage Collector Current Base Current Total Device Dissipation Derate above TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PACKAGE OUTLINE: 4 PIN CLCC PIN 1: PIN 2: PIN 3: PIN 4: COLLECTOR EMITTER BASE N/C TC = 25oC TA = 25oC PD TOP & TSTG Rθ JC Rθ JA C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031E SFT5013-4 thru SFT5015-4 ELECTRICAL CHARACTERISTICS RATING Collector - Emitter Breakdown Voltage * (IC = 200µA, RBE = 1kOhm) (IC = 1mA) SFT5013-4 SFT5014-4 SFT5015-4 SFT5013-4 SFT5014-4 SFT5015-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SYMBOL MIN MAX UNIT BVCEO BVCER 400 800 900 1000 800 900 1000 6 20 40 20 25 - 12 50 20 250 300 250 500 1.0 10 200 1200 2 700 V V Collector - Base Breakdown Voltage (IC = 200µA) Emitter - Base Breakdown Voltage (IE = 50µA) Collector Cutoff Current (VCB = 650/700/760V) Emitter Cutoff Current (VEB = 4V) DC Current Gain * BVCBO BVEBO V V µA µA TA = 25oC TA = 100oC I CBO I EBO IC = 1mA; VCE = 10V IC = 25mA; VCE = 10V IC = 100mA; VCE = 10V HFE Collector - Emitter Saturation Voltage * (IC = 25mA; IB = 2.5mA) Base - Emitter Saturation Voltage (IC = 25mA; IB = 2.5mA) Current Gain Bandwidth Product * IC = 10mA; VCE = 10V; f = 10MHz Output Capacitance VCB = 20V; IE = 0A; f = 1MHz Turn on Delay Time Rise Time Storage Time Fall Time VCC = 100V IC = 100mA IB1 = IB2 = 10mA VCE(SAT) VBE(SAT) fT Cob td tr ts tf mV V MHz pF nsec nsec µsec nsec NOTES: *Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.