SFT501_1

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT501 and SFT503 Series 5 AMP 200 Volts HIGH SPEED PNP Transistor Features: • • • • • • • • • Radiation Tolerant Fast Switching High Frequency, 50 MHz Typical BVCEO 150 Volts Min High Linear Gain Very Low Leakage and Saturation 200ºC Operating Temperature Gold Eutectic Die Attach Designed for Complementary Use with SFT502 and SFT504 DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT501 __ __ SFT503 __ __ │ └ Scre ening 2/ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package 3/ __ = TO-5 Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continues Collector Current Base Current Power Dissipation @ TC = 50ºC Derate above 50ºC Operating & Storage Temperature Symbol VCEO VCBO VEBO IC IB PD Top & Tstg Junction to Case RθJC TO-5 Value 150 200 7 5 1 10 66.6 -65 to +200 22 Units Volts Volts Volts Amps Amps W mW/ºC ºC ºC/W Maximum Thermal Resistance NOTES: * P ulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. PIN ASSIGNMENT Package TO-5 Pin 1 Emitter Pin 2 Base Pin 3 (Case) Collector Available parts: SFT501 SFT503 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0040D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT501 and SFT503 Series Electrical Characteristic 4/ Collector – Emitter Breakdown Voltage Collector – Base Breakdown Voltage E mitter – Base Breakdown Voltage Collector – Cutoff Current Collector – Cutoff Current E mitter – Cutoff Current DC Current Gain * SFT501 SFT503 IC = 50mA IC = 200µA IE = 200µA VCE = 100 V VCB = 100 V VEB = 6 V VCE = 5 V, IC = 50mA VCE = 5 V, IC = 2.5A VCE = 5 V, IC = 5 A VCE = 5 V, IC = 50mA VCE = 5 V, IC = 2.5A VCE = 5 V, IC = 5 A IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VCE = 5 V, IC = 0.5A, f = 10MHz VCB = 10V, IE = 0 A, f = 1MHz VBE = 10V, IC = 0 A, f = 1MHz Symbol BVCEO BVCBO BVEBO ICEO ICBO IEBO Min 150 200 7 –– –– –– 20 30 20 50 50 40 –– –– –– –– 40 –– –– –– –– –– –– T yp 200 275 13 –– –– –– –– –– 70 –– –– 70 0.35 0.6 1.0 1.2 60 130 450 25 40 320 130 Max –– –– –– 1.0 500 500 –– –– –– –– –– –– 0.75 1.5 1.3 1.5 –– 225 600 50 250 600 300 Units Volts Volts Volts µA nA nA hFE –– Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time VCE(Sat) VB E(Sat) fT cob Cib td Volts Volts MHz pF pF nsec nsec nsec nsec VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A tr tS tf NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0040D DOC