SFT5333A_1

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5333A 2 AMP, 100 Volts HIGH SPEED PNP TRANSISTOR DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT5333 A __ __ │ └ Screening │ │ │ │ └ Package 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level __ = TO-5 Features: • • • • • • • Radiation Tolerant Fast Switching, 150ns max t(on) High Frequency, fT 85MHz min. BVCEO 70 Volts min. Low Saturation Voltage 200ºC Operating Temperature, Gold Eutectic Die Attach Designed for Complementary Use with SFT4300A • TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings3/ Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 100ºC Derate above 100ºC Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Symbol VCEO VCBO VEBO IC IB PD Top & Tstg RθJC TO-5 Value 70 100 6 2 1 15 150 -65 to +200 7 Units Volts Volts Volts Amps Amps W mW/ºC ºC ºC/W NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0054C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5333A Symbol IC = 30mA IC = 200µA IE = 200µA VCB = 90V, TC= 25ºC VCB = 90V, TC= 100ºC VCE = 40V VEB = 6V IC = 1A IC = 2A IC = 1A, IB = 100mA IC = 2A, IB = 200mA IC = 2A, VCE = 4VDC VCE = 10V, IC = 1ADC, f = 10MHz Electrical Characteristic 4/ Collector – Emitter Breakdown Voltage* Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Cutoff Current Collector – Cutoff Current Emitter – Cutoff Current DC Current Gain * (VCE = 5V) Collector – Emitter Saturation Voltage * Base – Emitter Voltage * Current Gain Bandwidth Product Output Capacitance Input Capacitance Turn On Time Turn Off Time Min 70 100 6 –– –– –– 40 40 –– –– –– 85 –– –– –– –– Max –– –– –– 1 75 5 1 250 –– 0.45 1.0 1.5 –– 75 300 150 450 Units Volts Volts Volts µA µA µA –– Volts Volts MHz pF pF nsec nsec BVCEO BVCBO BVEBO ICBO ICEO IEBO HFE VCE(Sat) VBE(On) fT Cob Cib tON tOFF VCB = 30V, IE = 0A, f = 1MHz VBE = 6V, IC = 0A, f = 1MHz VCC = 20V, IC = 1ADC, VEB(Off) = 3.7V, IB1 = IB2 = 100mADC, RL= 20Ω TO-5 PIN ASSIGNMENT Package TO-5 Pin 1 Emitter Pin 2 Base Pin 3 (Case) Collector NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0054C DOC