SFT5926-63

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5926/63 150V, 100 AMP POWER TRANSISTOR SILICON NPN 350 WATTS DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT5926 __ │ └ Screening 2/ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package /63 = TO-63 __ Features: • • • • • High Frequency transistor with BVCEO to 120 Volts Enhanced SOA capability and Fast Switching High Power Dissipation: 350 Watts 200°C Operating Temperature Replacement for 2N5926 TX, TXV, S-Level Screening Available2/ - Consult Factory • Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25ºC Derate above 25ºC Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Symbol VCEO VCBO VEBO IC IB PD Top & Tstg RθJC TO-63 Value 120 150 10 100 20 350 2 -65 to +200 0.5 Units Volts Volts Volts Amps Amps W W/ºC ºC ºC/W NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, operating curves, and availability contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0115A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5926/63 Symbol IC = 200mA VCE = 150V VCE = 100V, TC = 150°C VEB = 10V VCE = 2V, IC = 20A VCE = 2V, IC = 50A VCE = 4V, IC = 90A VCE = 2V, IC = 50A, TA = -65°C IC = 50A, IB = 5A IC = 90A, IB = 18A IC = 50A, VCE = 2V IC = 90A, VCE = 4V VCE = 10V, IC = 5A, f= 100kHz VCE = 4V, IC = 50A,1s, TC = 25°C VCE = 50V, IC = 1A,1s, TC = 25°C VCE = 100V, IC = 0.5A,1s, TC= 25°C VCC = 50V, VBE1 = 11.2V RC = 1Ω, VBE2 = 10V RB = 2Ω BVCEO ICES IEBO hFE Min 120 20 10 5 10 5 Max 2 10 1 120 100 0.6 1.5 1.5 2.5 20 7 4 6 Units Volts mA mA –– Electrical Characteristic 3/ Collector – Emitter Breakdown Voltage* Collector – Cutoff Current Emitter – Cutoff Current DC Current Gain * Collector – Emitter Saturation Voltage * Base – Emitter Voltage * Common Emitter Small Signal Gain Safe Operating Area ON Time Storage Time Fall Time NOTES: 1. DIMENSION DOES NOT INCLUDE SEALING FLANGES. 2. PACKAGE CONTOUR OPTIONAL WITHIN DIMENSIONS SPECIFIED. 3. POSITION OF LEADS IN RELATION TO HEXAGON IS NOT DEFINED. PIN ASSIGNMENT PIN 1: PIN 2: PIN 3: EMITTER BASE COLLECTOR TO-63 1 SITTING PLANE .300 MAX 2 VCE(Sat) VBE(on) hfe SOA1 SOA2 SOA3 tON tS tf Volts Volts –– –– µsec µsec .167 .090 3x Ø.105 .060 .260 .240 3 Ø.875 .775 2 5/16-24 UNF-2A 1 .515 .485 2 Ø.313 .279 3 .105 MAX .495 .460 .515 .380 1.030 .937 .885 .855 Ø.775 .745 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0115A DOC