SFT6678ZUB

SFT6678 SERIES Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT6678 M __ TX ¦ ¦ ¦ + Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level ¦ + Lead Bend 3/ 4/ _ = Straight Leads ¦ UB = Up Bend ¦ DB = Down Bend + Package 3/ M = TO-254 Z = TO-254Z /3 = TO-3 ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ 15 AMPS 400 Volts NPN High Speed Power Transistor Application Notes: • Replaces Industry Standard 2N6678 • Designed for High Voltage, High Speed, Power Switching Applications Such as: • Off-Line Supplies • Converter Circuits • Pulse Width Modulated Regulators • Motor Controls • Deflection Circuits Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Continuous Base Current Operating and Storage Temperature Total Power Dissipation @ TC=25°C Derate above 25°C Maximum Thermal Resistance (Junction to Case) Symbol VCEO VCBO VEBO IC IB TJ, TSTG PD R0JC Value 400 650 8.0 15 5.0 -65 to +200 175 1.0 1.0 Units Volts Volts Volts Amps Amps °C W W/°C ºC/W TO-254 (M) TO-254 (Z) TO-3 (/3) Available Part Numbers: SFT6678/3 SFT6678M SFT6678MDB SFT6678MUB SFT6678Z SFT6678ZDB SFT6678ZUB PIN ASSIGNMENT (Standard) Package Collector Emitter Case Pin 2 TO-3 (/3) Pin 1 Pin 2 TO-254 (M) Pin 1 Pin 2 TO-254 (Z) Base Pin 3 Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0019C DOC SFT6678 SERIES Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Electrical Characteristics Collector Cutoff Current VCE=650VDC, VBE(off) =1.5VDC Collector – Base Leakage Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage (IC = 200mA, IB = 0) DC Current Gain * VCE=3V, 1C=15A, TA= 25°C VCE=3V, 1C=1A, TA= 25°C VCE=3V, 1C=15A,TA= -55°C TC=25°C TC=100°C VCB =650V (VEB = 8V, IC = 0) Symbol ICEV ICBO IEBO Min - Max 0.1 1.0 1 2 1.5 1.5 2.0 Units mA mA mA 400 8 15 4 - VCEO(sus) HFE1 HFE2 HFE3 VBE (SAT) (TC = 25°C) V (TC = 100°C) CE (SAT) (VCC = 11.7V) (VCC = 20V) (VCC = 100V) VDC Base-Emitter Saturation Voltage * (IC = 15ADC, IB = 3ADC) Collector-Emitter Saturation Voltage * (IC = 15A, IB = 3A) Second Breakdown (t = 1.0 sec, TC = 25oC) Reverse Bias Second Breakdown (VBE (off) = 1 to 6V, VCLAMP = 450V, T C < 100oC) VDC VDC A A A A IS/b1 IS/b2 IS/b3 RBSOA 15.0 8.75 0.3 15.0 3 150 10 500 0.1 0.6 2.5 0.5 0.5 Current Gain (IC = 1A, VCE = 10VDC, f = 5MHz) Output Capacitance (VCB = 10VDC , f = 0.1MHz) |hFE| Cob td ts tr tf pF Delay Time Storage Time Rise Time Fall Time (VCC = 200VDC , IC = 15ADC, IB1 = IB2 = 3ADC, tP = 50 µsec, Duty Cycle < 2% VB = 6VDC , RL = 13.5Ω) –– –– µsec Cross Over Time (IC = 15 A(pk), VCLAMP = 450V, IB1 = 3 A, VBE(off) = 6V) tc –– µsec NOTES: * Pulse Test: Pulse Width = 300 µs, Duty Cycle < 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations Available for M and Z (TO-254 and TO-254Z) Packages Only. 5/ All Electrical Characteristics @ 25oC, Unless Otherwise Specified. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0019C DOC