SFT8600-5

SFT8600/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT8600 __ __ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package /5 = TO-5 1 AMP 1000 Volts NPN Transistor FEATURES:       BVCEO to 400 volts Very Low Saturation Voltage Very Low Leakage High Gain from 20 mA to 250 mA 200°C Operating, Gold Eutectic Die Attach Superior Performance over JEDEC 2N5010-15 Series  High Speed Switching tf = 0.4µS TYP Symbol Value Units Maximum Ratings Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 100º C Derate above 25º C Operating and Storage Temperature Thermal Resistance, Junction to Case VCEO VCER VCBO VEBO IC IB PD Tj, Tstg RθJC 400 1000 1000 6 1 100 3.3 33 -65 to +200 30 V V V A mA W mW/ºC ºC ºC/W TO-5 (/5) NOTES: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0033J DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT8600/5 Symbol BVCEO BVCER BVCBO BVEBO ICBO ICEO IEBO Min 400 1000 1000 6 –– –– –– 10 30 40 20 15 –– –– –– –– 8.0 –– ----Max –– –– –– 10 500 10 1 Units V V V µAdc µAdc µAdc Electrical Characteristic Collector – Emitter Breakdown Voltage (IC= 10mAdc) (IC= 20µAdc, RBE = 1KΩ) Collector–Base Breakdown Voltage (IC= 20µAdc) Emitter–Base Breakdown Voltage (IE= 20µAdc) Collector Cutoff Current (VCB= 800V) (VCB= 800V @ TC= 150°C) Collector Cutoff Current (VCE= 400 Vdc) Emitter Cutoff Current (VEB= 4V) DC Current Gain* (IC= 100mAdc, VCE= 5Vdc, TC= -55°) (IC= 5mAdc, VCE= 5Vdc) (IC= 10mAdc, VCE= 5Vdc) (IC= 100mAdc, VCE= 5Vdc) (IC= 250mAdc, VCE= 5Vdc) Collector – Emitter Saturation Voltage* (IC= 20mAdc, IB= 2mAdc) (IC= 100mAdc, IB=10mAdc) Base – Emitter Saturation Voltage * (IC= 20mAdc, IB= 2mAdc) (IC=100mAdc, IB=10mAdc) Current Gain Bandwidth Product (IC= 100mAdc, VCE= 10Vdc, f= 10MHz) Output Capacitance (VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz) Delay Time Rise Time Storage Time Fall Time (VCC = 125Vdc, IC = 100 mAdc, IB1 = 20 mAdc, IB2 = 40 mAdc) hFE 200 –– VCE(Sat) 0.3 0.5 0.8 1.0 –– 15 50 150 3 800 Vdc VBE(Sat) fT Vdc MHz pF nsec nsec µsec nsec Cob td tr ts tf * Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2% NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0033J DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT8600/5 CASE OUTLINE: TO-5 FIGURE 1 OUTLINE AND DIMENSIONS All dimensions are in inches Tolerances: (unless otherwise specified) XX: ±0.01” XXX: ±0.005” Pin 1: Emitter Pin 2: Base Pin 3: Collector Case: Collector FIGURE 2 SAFE OPERATING AREA (t = 1 sec) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0033J DOC