SFT8600S.5

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT8600S.5 1 AMP 1000 Volts NPN Transistor DESIGNER’S DATA SHEET FEATURES: • • • • • • • BVCEO minimum 400 volts Very Low Saturation Voltage Very Low Leakage High Gain from 20 mA to 250 mA 200° C Operating, Gold Eutectic Die Attach Superior Performance over JEDEC 2N5010-15 Series High Speed Switching tf = 0.4µS TYP Maximum Ratings Symbol Value Units Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25º C Derate above 175º C Operating and Storage Temperature VCEO VCER VCBO VEBO IC IB PD Tj, Tstg R?JC 400 1000 1000 6 1 100 5.0 200 -65 to +200 5 V V V A mA W mW/ºC ºC ºC/W Thermal Resistance, Junction to Case CASE OUTLINE: SMD.5 .304 .288 3x .020 .010 .030 MIN 2x .103 .087 All dimensions are in inches Tolerances: .030 MIN .408 .392 .233 .217 .128 .112 (unless otherwise specified) XX: ±0.01” XXX: ±0.005” 2x .010 MAX .304 .288 .145 .115 PACKAGE OUTLINE: SMD.5 PINOUT: PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: BASE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0083A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT8600S.5 Symbol BVCEO BVCER BVCBO BVEBO Min 400 1000 1000 6 Max –– Units V Electrical Characteristic Collector – Emitter Breakdown Voltage (IC= 10mAdc) (IC= 20µAdc, RBE = 1KΩ) Collector–Base Breakdown Voltage (IC= 20µAdc) Emitter–Base Breakdown Voltage (IE= 20µAdc) Collector Cutoff Current (VCB= 800V) (VCB= 800V @ TC= 150°) Collector Cutoff Current (VCE= 400 Vdc) Emitter Cutoff Current (VEB= 4V) DC Current Gain* (IC= 100mAdc, VCE= 5Vdc, TC= -55°) (IC= 5mAdc, VCE= 5Vdc) (IC= 10mAdc, VCE= 5Vdc) (IC= 100mAdc, VCE= 5Vdc) (IC= 250mAdc, VCE= 5Vdc) Collector – Emitter Saturation Voltage* (IC= 20mAdc, IB= 2mAdc) (IC= 100mAdc, IB=10mAdc) Base – Emitter Saturation Voltage * (IC= 20mAdc, IB= 2mAdc) (IC=100mAdc, IB=10mAdc) Current Gain Bandwidth Product (IC= 100mAdc, VCE= 10Vdc, f= 10MHz) Output Capacitance (VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz) –– –– 10 500 10 V V ICBO –– µAdc µAdc µAdc ICEO IEBO –– –– 10 30 40 20 15 –– –– –– –– 8.0 –– 1 HFE 200 –– VCE(Sat) 0.3 0.5 0.8 1.0 –– 15 Vdc VBE(Sat) fT Cob Vdc MHz pF Delay Time Rise Time Storage Time Fall Time (VCC = 125Vdc, IC = 100 mAdc, IB1 = 20 mAdc, IB2 = 40 mAdc) td tr ts tf ----- 50 150 3 800 nsec nsec µsec nsec * Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2% For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0083A DOC