SHF1103SM

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1100SM thru SHF1103SM 1 AMP 50–300 Volts 35 nsec HYPER FAST RECTIFIER Features: • • • • • • • • Hyper Fast Recovery: 35 nsec Max. PIV to 300 Volts Hermetically Sealed Surface Mount Package Void Free Construction For High Efficiency Applications Single Chip Construction Replaces for UES1104 Types TX, TXV, and S-Level Screening Available2/ DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SHF11 __ SM __ ⏐ ⏐ ⏐ ⏐ ⏐ L ⏐ ⏐ ⏐ ⏐ L Screening = None TX = TX Level TXV = TXV Level -S = S Level 2/ L Package SM = Surface Mount Round Tab Voltage 00 = 50 V 01 = 100 V 02 = 200 V 03 = 300 V Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SHF1100SM SHF1101SM SHF1102SM SHF1103SM Symbol VRRM VRWM VR Io Value 50 100 200 300 1 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25ºC) Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to End Tab Amps IFSM Top & Tstg RθJE 20 -65 to +175 28 SM Amps ºC ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0115C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1100SM thru SHF1103SM Symbol VF VF IR IR CJ trr Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 1 Adc, TA = 25ºC, 300 µs pulse) Instantaneous Forward Voltage Drop (IF = 5Adc, TA = -55ºC, 300 µs pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC) Case Outline: Surface Mount Round Tab Max 1.35 1.5 10 1 20 35 Units Vdc Vdc μA mA pF nsec DIMENSIONS DIM A B C MIN .095” .190” .005” MAX .105” .210” .025” NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0115C DOC