SHF1109

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS 1 AMP 400 - 900 V Hyper Fast Rectifier Axial Lead Diode SMS DESIGNER’S DATA SHEET Features: • Hyper Fast Recovery: 40 nsec maximum • PIV to 900 Volts, Consult Factory • Hermetically Sealed • Void Free Construction • For High Efficiency Applications • Replaces UES 1104, UES1106, IN6624 • TX, TXV, S Level screening Available Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance SHF1104 SHF1106 SHF1108 SHF1109 VRRM VRSM VR Io IFSM TOP & TSTG 400 600 800 900 1.0 20 -65 to +175 35 28 Volts Amps Amps ºC ºC/W Junction to Leads, L = 3/8 Junction to Tabs RθJE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0111E DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS Symbol Max Units Electrical Characteristic Instantaneous Forward Voltage Drop (IF = 1ADC, TA = 25ºC pulsed) Instantaneous Forward Voltage Drop (IF = 1ADC, TA = -55ºC pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR=10VDC, TA=25ºC, f=1MHz) Case Outline: (Axial) VF VF 1.35 1.5 10 1 40 22 DIM A B C D MIN 0.100” 0.130” 0.027” 1.00” VDC VDC µA mA nsec pF MAX 0.130” 0.180” 0.033” -- IR IR tRR CJ D B D ØC ØA Case Outline: (SMS) B A DIM A B C D A MIN 0.127” 0.180” 0.020” 0.002” MAX 0.140” 0.230” 0.030” -- C D