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SHF1208TX

SHF1208TX

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SHF1208TX - 2AMP 400-900V Hyper Fast Rectifier - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SHF1208TX 数据手册
Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1204 & SHF1204SMS thru SHF1209 & SHF1209SMS 2 AMP 400 - 900 V Hyper Fast Rectifier Features: • • • • • • • Hyper Fast Recovery: 40 nsec maximum PIV to 900 Volts, Consult Factory Hermetically Sealed Void Free Construction For High Efficiency Applications Replaces UES1204, UES1206 TX, TXV, S Level screening Available2/ DESIGNER’S DATA SHEET SHF12 __ │ │ │ │ │ │ │ │ └ __ │ │ │ │ │ └ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Family/Voltage 04 = 400 V 06 = 600 V 08 = 800 V 09 = 900 V Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance SHF1204 SHF1206 SHF1208 SHF1209 VRRM VRSM VR Io IFSM TOP & TSTG 400 600 800 900 2.0 20 -65 to +175 35 28 Volts Amps Amps ºC ºC/W SMS Junction to Leads, L = 3/8 " Junction to Tabs RθJL RθJE NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Axial Lead Diode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0081G Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1204 & SHF1204SMS thru SHF1209 & SHF1209SMS Symbol Max Units Electrical Characteristic Instantaneous Forward Voltage Drop (IF = 1.2ADC, TA = 25ºC; pulsed) Instantaneous Forward Voltage Drop (IF = 2ADC, TA = 25ºC; pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC; pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC; pulsed) Junction Capacitance (VR=10VDC, TA=25ºC, f=1MHz) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) (IF = 500mA, IR = 1A, IRR = 250mA, TA = 100ºC) Case Outline: (Axial) VF VF 1.7 1.9 10 1 22 40 80 DIM A B C D MIN 0.100” 0.130” 0.027” 1.00” VDC VDC µA mA pF nsec MAX 0.130” 0.180” 0.033” -- IR IR CJ tRR D B D ØC ØA Case Outline: (SMS) B A DIM A B C D A MIN 0.127” 0.180” 0.020” 0.002” MAX 0.140” 0.230” 0.030” -- C D NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0081G
SHF1208TX 价格&库存

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