SPMR600-01

SPMR600-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPACE LEVEL SHUNT MODULE FEATURES: • • • • • • Space Level Power Supply Applications Compact and Rugged Construction Offering Weight and Space Savings Very Low Mechanical Stress and Thermal Resistance Hermetic Sealed Discrete Elements Excellent Thermal Management TX, TXV, and Space Level Screening Available 1/ Designer’s Data Sheet Part Number/Ordering Information SPMR600 -01 __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level 150V Schottky section: Peak Surge Reverse Voltage Peak Repetitive Reverse Voltage Maximum Ratings Symbol VRSM VRRM IO ID2 @ TC = 25°C @ 1.5 x VRRM @ IAS= 6A L= 0.1 mH @ TC = 25ºC IFSM IAR EAS PD TOP & TSTG Value 150 150 40 600 0.6 0.6 TBD -55 to+175 Units V V A A A mJ W °C Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Non-repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave) M ax. Avalanche repetitive reverse current Non-repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature 150V Schottky section: Electrical Characteristics Instantaneous Forward Voltage Drop (Pulsed, TA = 25 ºC) Instantaneous Forward Voltage Drop (Pulsed, TA = 125 ºC) Instantaneous Forward Voltage Drop (Pulsed, TA = -55 ºC) Reverse Leakage Current (Pulsed, TA = 25 ºC) Reverse Leakage Current (Pulsed, TA = 125 ºC) Reverse Leakage Current (Pulsed, TA = 150 ºC) Junction Capacitance (TA = 25ºC, f = 1MHz) IF = 10Adc IF = 20Adc IF = 40Adc IF = 10Adc IF = 20Adc IF = 40Adc IF = 10Adc IF = 20Adc IF = 40Adc VR = 150 V VR = 150 V VR = 150 V VR = 10V Symbol VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 IR1 IR2 IR3 CJ Min –– –– –– –– –– –– –– –– –– –– –– –– –– T yp 0.650 0.715 0.775 0.500 0.560 0.640 0.800 0.840 0.925 10 5 10 1000 Max 0.75 0.80 0.85 0.64 0.68 0.75 0.90 0.96 1.03 500 50 –– 1250 Units V V V μA mA mA pF Notes: 1/ For ordering information, price, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0025A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPMR600-01 Maximum Ratings continuous transient @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC 250V MOSFET section: Drain - Source Voltage Gate – Source Voltage Symbol VDSS VGS ID1 ID2 ID3 IAR EAS PD TOP & TSTG Value 250 ±20 ±30 85 70 110 25 1000 250 -55 to +150 Units V V A A A mJ W ºC M ax. Continuous Drain Current (package limited) Pulsed Drain (Instantaneous) Current (Tj limited) M ax. Avalanche current Single / Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature 250V MOSFET section: Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage VGS = 0V, ID = 250μA VGS = 10V, ID = 55A, Tj= 25 C o VGS = 10V, ID = 55A, Tj=125 C VDS = VGS, ID = 1 mA, Tj= 25 C o VDS = VGS, ID = 1 mA, Tj= -55 C o VDS = VGS, ID = 1 mA, Tj= 125 C VGS = ±20V, Tj= 25 C o VGS = ±20V, Tj= 125 C VDS = 250V, VGS = 0V, Tj = 25 C o VDS = 250V, VGS = 0V, Tj = 125 C VDS = 10V, ID = 55A, Tj = 25 C VGS = 10V VDS = 125V ID = 25A VGS = 15V VDS = 125V ID = 55A RG = 2.0Ω, pw= 3us IF = 55A, VGS = 0V IF = 55A, di/dt = 250A/usec VGS = 0V VDS = 25V f = 1 MHz o o o o o Symbol BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD IRM(rec) Qrr Ciss Coss Crss trr Min 250 –– –– 2.5 –– –– –– –– –– –– 50 –– –– –– –– –– –– –– –– –– –– –– –– –– –– T yp –– 24 45 3.0 4.2 1.5 10 30 0.01 10 100 160 40 50 20 30 60 30 0.9 175 27 2.5 9400 850 60 Max –– 28 –– 4.5 –– –– ±200 –– 5 250 –– –– –– –– –– –– –– –– 1.2 –– –– –– –– –– –– Units V mΩ V nA μA μA Mho nC Gate to Source Leakage Z ero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance nsec V nsec A μC pF NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0025A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPMR600-01 CASE OUTLINE: ASPM NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0025A DOC