SPT5008S1DBS

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5006 and SPT5008 Series 10 AMPS 100 Volts High Power - High Speed NPN Transistors • • • • • • • • Features: Radiation Tolerant Fast Switching, 100 ns Maximum td High Frequency, fT> 30MHz BVCEO 80 Volts Minimum High Linear Gain, Low Saturation Voltage 200oC Operating Temperature Designed for Complementary Use With SPT5007 and SPT5009 TX, TXV, S-Level Screening Available. Consult Factory. Symbol VCEO VCBO VEBO IC IB PD T J & TSTG R0JC DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPT5006 __ __ __ SPT5008 __ __ __ │ │ └ Screening 2/ __ = Not Screened ││ TX = TX Level ││ TXV = TXV Level ││ S = S Level │ └ Lead Bend 3/ 4/ __ = Straight Leads │ UB = Up Bend │ DB = Down Bend └ Package 3/ /61 = TO-61 /3 = TO-3 M = TO-254 S1 = SMD1 Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 50ºC Derate Above 50ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Value 80 100 6 10 3 100 0.667 -65 to +200 1.5 Units Volts Volts Volts Amps Amps Watts W/ºC ºC ºC/W TO-61 (/61) TO-3(/3) TO-254 (M) SMD1 (S1) NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0113A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5006 and SPT5008 Series Symbol (IC = 200 mA) (IC = 200 µA) (IE = 200 µA) (VCE = 40 V) (VCE = 60 V) (VCE = 100 V) (VCE = 60 V, VBE = 2 V, TC = 150ºC) (VEB = 4 V) (VEB = 5.5 V) (IC = 100 mA, VCE = 5 V) 2N5006 2N5008 (IC = 5 A, VCE = 5 V) 2N5006 2N5008 (IC = 10 A, VCE = 5 V)2N5006 2N5008 (IC = 5 A, IB = 500 mA) (IC = 10 A, IB = 500 mA) (IC = 5 A, IB = 500 mA) (IC = 10 A, IB = 1 A) (VCE = 5 V, IC = 5 A) (VCE = 5 V, IC = 0.5 A, f = 20 MHz)2N5006 Electrical Characteristics Collector – Emitter Blocking Voltage * Collector – Base Blocking Voltage Emitter – Base Blocking Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain * Min 80 100 6 –– –– –– –– –– 20 50 30 70 20 45 –– –– –– –– –– 30 40 –– Max –– –– –– 50 1.0 1.0 500 1.0 1.0 –– –– 90 200 –– –– 0.9 1.5 1.8 2.2 1.8 –– –– 275 100 100 2.0 200 Units Volts Volts Volts μA μA mA μA μA mA BVCEO BVCBO BVEBO ICEO ICES ICEX ICEX IEBO hFE Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base – Emitter Voltage* Current Gain – Bandwidth Product VCE (SAT) VBE (SAT) VBE (ON) fT Cob t(on) t(off) td tr ts tf Volts Volts MHz pF ns ns μs ns 2N5008 Output Capacitance Delay Time Rise Time Storage Time Fall Time NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows are available on request. 3/ For Package Outlines Contact Factory. VCB = 10 V, IE = 0 A, f = 1.0MHz (VCC = 40 V, IC = 2 A, VEB (OFF) = 3.0 V, IB1 = IB2 = 200 mA) (tp = 2μs) –– –– –– –– 4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only. 5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SPT5006/61, SPT5006/3, SPT5006M, SPT5006MUB, SPT5006MDB, SPT5006S1, SPT5008/61, SPT5008/3, SPT5008M, SPT5008MUB, SPT5008MDB, SPT5008S1 PIN ASSIGNMENT (Standard) Package Collector Emitter TO-61 (/61) Pin 3 Pin 1 TO-3 (/3) Case Pin 2 TO-254 (M) Pin 1 Pin 2 SMD1(S1) Pin 2 Pin 1 Base Pin 2 Pin 3 Pin 3 Pin 3 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0113A DOC