SPT5502_1

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5502 and SPT5503 1 AMP HIGH VOLTAGE / HIGH SPEED NPN TRANSISTOR 700 - 800 VOLTS 6 WATTS DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPT5502 SPT5503 __ __ │ │ │ │ │ └ __ __ └ Screening 2/ __ = Not Screened Features: • • • • TX = TX Level TXV = TXV Level S = S Level Package __ = TO-5 BVCBO to 800 Volts Fast Switching: tD = 100 nsec max Good Safe Operating Area Linear Gain from 50mA to 1.0A • TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings3/ Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation D erate above TC = 25ºC Symbol SPT5502 SPT5503 SPT5502 SPT5503 SPT5502 SPT5503 VCER VCEO VCBO VEBO IC IB TC = 25ºC PD Top & Tstg RθJC Value 700 800 350 400 700 800 10 1.0 0.5 6.0 34.3 -65 to +200 29 TO-5 Units V V V V A A W mW/ºC ºC ºC/W Operating & Storage Temperature Thermal Resistance NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Operating Curves, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0026C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5502 and SPT5503 Electrical Characteristic (IC = 200μ A, IB = 0A, RBE = 1kΩ) 3/ Symbol SPT5502 SPT5503 VCE = 300VDC VCE = 400VDC TC = 25°C TC = 100°C BVCER ICEO ICEX ICBO IEBO IC = 50mADC IC = 0.5ADC IC = 1ADC IC = 0.5ADC, IB = 0.1ADC IC = 1ADC, IB = 0.25ADC IC = 0.5ADC, IB = 0.1ADC IC = 1ADC, IB = 0.25ADC Min 700 800 –– –– –– –– –– –– 15 10 5 –– –– –– –– 35 –– 50 –– –– –– –– Max –– –– 10 10 10 0.5 10 1 –– 90 50 0.5 1.0 1.0 1.2 –– 35 –– 100 300 3 500 Units VDC µADC µADC mADC µADC µADC Collector – Emitter Breakdown Voltage Collector – Cutoff Current (IB = 0ADC) Collector – Cutoff Current (VCE = R ated VCE, VEB(off) = 1.5VDC) Collector – Cutoff Current (VCB = R ated VCB, IE = 0ADC) Emitter – Cutoff Current (VBE = 10 VDC, IC = 0ADC) DC Current Gain * (VCE = 5VDC) hFE –– Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Current Gain Bandwidth Product (VCE = 10VDC, IC = 100mADC, f = 1MHz) VCE(Sat) VBE(Sat) fT Cob IS/B VDC VDC MHz pF mADC nsec µsec nsec Output Capacitance (VCB = 20VDC, IE = 0, f = 1MHz) Second Breakdown Collector Current with Base Forward Biased (VCE = 200VDC, t = 1 sec(Non-Repetitive)) Delay Time Rise Time Storage Time Fall Time VCC = 125VDC, IC = 1ADC, IB1 = 200mADC VCC = 125VDC, IC = 1ADC, IB1 = IB2 = 200mADC td tr ts tf NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0026C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5502 and SPT5503 TO-5 .260 .240 1.500 MIN Ø.021 .016 .210 Ø.190 PIN 3 PIN 2 Ø.370 Ø.335 .335 .305 45° PIN 1 .125 .009 .045 .029 .034 .028 PIN ASSIGNMENT Package TO-5 Pin 1 Emitter Pin 2 Base Pin 3 (Case) Collector NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0026C DOC