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SPT6233

SPT6233

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SPT6233 - 5 AMP 250 - 350 Volts NPN Transistor - Solid States Devices, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
SPT6233 数据手册
Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT6233 – SPT6235 Series DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPT6233 __ __ __ __ SPT6234 __ __ __ __ SPT6235 __ __ __ __ 5 AMP 250 – 350 Volts NPN Transistor Features: • • • • • Switching Power Transistor Isolated and Non-isolated Packages Available High Power Dissipation: Up to 50W Rugged SOA Also Available in TO-39, TO-111, and Isolated TO-59, Consult Factory • Replacement for 2N6233 through 2N6235 • TX, TXV, S-Level Screening Available │ │ │ └ Screening 2/ __ = Not Screen │││ TX = TX Level │││ TXV = TXV Level │││ S = S Level │││ │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ UB = Up Bend ││ DB = Down Bend │ └ Pin Out Configuration 5/ __ = Normal │ R = Optional │ └ Package 3/ /66 = TO-66 M = TO-254 J = TO-257 Maximum Ratings Collector – Emitter Voltage SPT6233 SPT6234 SPT6235 SPT6233 SPT6234 SPT6235 Symbol VCEO Value 225 275 325 250 300 350 6 5 50 39 33 -65 to +200 3.2 4.5 5.3 Units Volts Collector – Base Voltage VCBO VCBO IC Volts Volts Amps W ºC ºC/W Emitter – Base Voltage Continuous Collector Current Power Dissipation @ TC = 25ºC Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-66 (/66) TO-254 (M) TO-257 (J) TO-254 (M) TO-66 (/66) TO-254 (M) TO-257 (J) PD Top & Tstg RθJC TO-66 (/66) 1 TO-257 (J) 3 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0029C Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT6233 – SPT6235 Series Electrical Characteristics 6/ Collector – Emitter Sustaining Voltage (IC = 20 mA) Emitter – Cutoff Current Collector – Cutoff Current SPT6233 SPT6234 SPT6235 VBE = 6 V SPT6233, VCB = 250 V SPT6234, VCB = 300 V SPT6235, VCB = 350 V SPT6233, VCE = 225 V SPT6234, VCE = 275 V SPT6235, VCE = 325 V SPT6233, VCE = 250 V SPT6234, VCE = 300 V SPT6235, VCE = 350 V VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A VCE = 5V, IC = 3A IC = 5A, IB = 1A IC = 1.0A, IB = 0.1A IC = 5A, IB = 1A IC = 1.0A, IB = 0.1A IC = 1A, Vce = 5 V VCE = 10V VCE = 45V VCE = 10V, IC = 0.25A VCE = 10V, f = 1MHz Symbol BVCEO IEBO ICBO Min 225 275 325 –– –– Typ –– –– –– –– –– Max –– –– –– 100 100 Units Volts uA uA Collector – Cutoff Current ICEO –– –– 1.0 mA Collector – Cutoff Current (VBE = -1.5 V, Tc = 150 ºC ) DC Forward Current Transfer Ratio * ICEX –– 25 15 10 –– –– –– –– –– 5.0 1.0 20 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– 0.5 3.5 0.5 1.0 –– 125 –– 2.5 0.5 2.0 1.0 1.0 –– –– –– 250 0.75 5.0 0.8 mA hFE VCE(SAT) VBE(SAT) VBE(ON) SOA fT cob tr tS tf –– Volts Volts Volts Amp MHz pF µsec µsec µsec Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * Base – Emitter On Voltage * Safe Operating Area (tp = 1 sec ) Frequency Transition Output Capacitance Rise Time (VCC = 200V, IC = 1.0A, IB1 = 0.1A) Storage Time (VCC = 200V, IC = 1.0A, IB1 = IB2 = 0.1A) Fall Time (VCC = 200V, IC = 1.0A, IB1 = IB2 = 0.1A) NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) and ‘J’ (TO257) Packages Only. 5/ Optional Pin Out Configurations are Available for ‘M’ (TO-254) and ‘J’ (TO-257) Packages Only. 6/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SPT6233/66; SPT6233M; SPT6233J; SPT6233MR; SPT6233JR SPT6234/66; SPT6234M; SPT6234J; SPT6234MR; SPT6234JR SPT6235/66; SPT6235M; SPT6235J; SPT6235MR; SPT6235JR Package TO-66 (/66) TO-254 (M) TO-257 (J) PIN ASSIGNMENT (Standard) Collector Emitter Case (1) Pin 2 Pin 1 Pin 2 Pin 1 Pin 2 Base Pin 3 Pin 3 Pin 3 Base Pin 1 Pin 1 PIN ASSIGNMENT (Optional) Package Collector Emitter Pin 2 Pin 3 TO-254 (MR) Pin 2 Pin 3 TO-257 (JR)
SPT6233
1. 物料型号: - SPT6233 - SPT6234 - SPT6235

2. 器件简介: - 这些是5安培的NPN晶体管,适用于250-350伏的电压范围。 - 提供隔离和非隔离封装。 - 高功率耗散,最高可达50W。 - 也提供TO-39、TO-111和隔离的TO-59封装。

3. 引脚分配: - 标准配置: - TO-66 (/66):集电极-外壳(1),发射极-引脚2,基极-引脚3。 - TO-254(M):集电极-引脚1,发射极-引脚2,基极-引脚3。 - TO-257(J):集电极-引脚1,发射极-引脚2,基极-引脚3。 - 可选配置: - TO-254 (MR):集电极-引脚2,发射极-引脚3,基极-引脚1。 - TO-257 (JR):集电极-引脚2,发射极-引脚3,基极-引脚1。

4. 参数特性: - 集电极-发射极电压(VCEO):SPT6233为225伏,SPT6234为275伏,SPT6235为325伏。 - 集电极-基极电压(VCBO):SPT6233为250伏,SPT6234为300伏,SPT6235为350伏。 - 发射极-基极电压(VCBO):6伏。 - 连续集电极电流(Ic):5安培。 - 功率耗散@TC=25°C:TO-66 (/66)为50W,TO-254(M)为39W,TO-257(J)为33W。 - 工作和存储温度范围:-65至+200摄氏度。 - 最大热阻(Junction to Case):TO-66 (/66)为3.2°C/W,TO-254(M)为5.3°C/W,TO-257(J)为4.5°C/W。

5. 功能详解: - 这些晶体管适用于开关电源应用,具有高功率耗散和坚固的SOA(安全工作区)。 - 可提供不同级别的筛选,包括TX、TXV和S级。

6. 应用信息: - 可替代2N6233至2N6235型号。 - 适用于需要高电压、高电流和高功率耗散的应用。

7. 封装信息: - 提供TO-66、TO-254、TO-257等封装。 - 可选的引脚弯曲配置,包括直引脚、上弯和下弯。
SPT6233 价格&库存

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