SPT6693

SPT6693 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPT6693__ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level 15 AMPS 400 Volts High Voltage – High Energy NPN Transistor • • • • • • • Features: Collector to Base Voltage 650 V Min High Power, 175 Watts High Gain, Low Saturation 200oC Operating Temperature Isolated Package with Low Theta Equivalent to MIL-PRF-19500/538 TX, TXV, S-Level Screening Available. Consult Factory. Symbol VCEO VCBO VEBO IC IB PD T OP & TSTG R0JC Maximum Ratings Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25ºC Derate above 25ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Notes: Value 400 650 8 15 7 175 1 -65 to +200 1.0 Units Volts Volts Volts Amps Amps Watts W/ºC ºC ºC/W TO-61 (/61) * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0114A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT6693 Symbol (IC = 200 mA) (VCEX = 650 V, VEB = 1.5 V) (VCEX = 400 V, VEB = 1.5 V) (VCEX = 650 V, VEB = 1.5 V, TA = 125°C) (VCE = 650 V) (VEB = 8 V) (IC = 1 A, VCE = 3 V) (IC = 15 A, VCE = 3 V) (IC = 15 A, VCE = 3 V, TA = -55°C) (IC = 15 A, IB = 3.0 A) (IC = 15 A, IB = 3.0 A, TA = 125°C) (IC = 15 A, IB = 3.0 A) VCE = 10 V, IC = 1 A, f = 5 MHz VCB = 10 V, IE = 0 A, f = 1.0MHz BVCEO ICEX1 ICEX2 ICEX3 ICBO IEBO hFE VCE (SAT)1 VCE (SAT)2 VBE (SAT) fT Cob Electrical Characteristics Collector – Emitter Blocking Voltage* Collector – Emitter Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain* Collector – Emitter Saturation Voltage* Base – Emitter Saturation Voltage* Current Gain – Bandwidth Product Output Capacitance Delay Time Min 400 –– –– –– 15 8 4 –– –– 15 150 Max –– 1 0.5 50 1 2 40 20 –– 1.0 2.0 1.5 50 500 Units Volts μA mA mA Volts Volts MHz pF td t(on) –– 100 ns Rise Time tr –– 600 ns Storage Time ts t(off) –– 2.5 μs Fall Time tf –– 0.5 μs Cross Over Time tc –– 0.5 μs Safe Operating Area, DC SOA1 SOA2 SOA3 SOA4 VCE = 11.7 V, IC = 15 A, 1 sec VCE = 25 V, IC = 7 A, 1 sec VCE = 100 V, IC = 0.25 A, 1 sec VCE = 400 V, IC = 10 mA, 1 sec Safe Operating Area, clamped switching VCC = 15 V, VBB2 = 5 V, RBB1 = 5 Ω, RBB2 = 1.5Ω, L = 50µH, Vclamp = 450V, IC = 15 A NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0114A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT6693 Case Outline: TO-61 Available Part Numbers: SPT6693 Package TO-61 (/61) PIN ASSIGNMENT (Standard) Emitter Collector Pin 3 Pin 1 Base Pin 2 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0114A DOC