SSG200EF60E

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG200EF60E 200 AMP N-CHANNEL IGBT WITH ANTI-PARALLEL DIODE 600 VOLTS Features: • • • • • • • Outstanding current capability Low on-state conductive losses Very simple gate drive design Improved SOA characterization Low input capacitance High reverse voltage rating available TX, TXV, S-Level screening available SYMBOL VCES VGES @ TC = 25ºC @ TC = 90ºC IC1 IC2 ICM ILM 4/ DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SSG200EF60E ___ └ Screening 2/ __ = N ot Screened TX = TX Level TXV = TXV S = S Level MAXIMUM RATINGS3/ Collector – Emitter Breakdown Voltage Gate – Emitter Voltage Max. Continuous Collector Current Pulsed Collector Current4/ Clamped Inductive Load Current (TJ = 125ºC)5/ Reverse Voltage Avalanche Energy (IC = 100A) Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Total Device Dissipation @ TC = 25ºC Dissipation Derating From @ TC = 25ºC to TC = 150ºC VALUE 600 ±20 200 100 300 100 5.6 -55 to +150 0.20 625 5 Milpack 3 UNIT V V A A A mJ ºC ºC/W W W/ºC EARV T OP & TSTG R0JC PD1 PD2 NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25 C. 4/ Pulse duration limited by TJmax; repetitive rating. 5/ VCC=80% rated BVCES, VGE=15V, L=30uH, RG=10Ω. o NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: G00003B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG200EF60E SYMBOL BVCES VGE(th) IC = 100A @ 25 C o IC = 100A @ 100 C o ELECTRICAL CHARACTERISTICS 3/ MIN 600 2.5 –– –– –– –– –– –– 40 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– TYP –– 5.5 1.65 1.8 0.01 10 40 4 –– 575 70 320 MAX –– 6 2.0 2.4 1.0 –– 200 10 –– 650 150 370 UNIT V V V μA μA μA mA S Collector - Emitter Breakdown Voltage (ICES = 250μA, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) Collector - Emitter Saturation Voltage Gate - Emitter Leakage Current (VGE = ±20V, VCE = 0V) Collector Leakage Current o (VCE = 480 V, VGE = 0V, Tj = 25 C) o (VCE = 600 V, VGE = 0V, Tj = 25 C) o (VCE = 480 V, VGE = 0V, Tj = 125 C) Forward Transconductance (IC = IC2, VCE = 10V) Gate Charge Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ANTI-PARALLEL DIODE Peak Current Peak Inverse Voltage Average Current Diode Forward Voltage @ IF=100A, TJ=25 C Reverse Recovery Time (If=40A, di/dt=200A/µsec) o VCE(sat) IGES ICES1 ICES2 ICES3 gfs VGE = 15V IC = 10A VCE = 300V VGE = 0V VCE = 25V f = 1 MHz VGE = 15V IC = 45A RG = 10Ω L = 100µH Qg(on) Qge Qgc Cies Coes Cres td(on) tr td(off) tf Ipk PIV Iavg VF trr nC 8400 15,000 1400 2,000 600 1,000 150 140 600 300 –– –– –– 1.1 200 500 175 1000 500 200 600 100 1.5 400 pF nsec A V A V nsec PACKAGE OUTLINE: MILPACK3 PIN OUT: PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: GATE PIN 4: EMITTER NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: G00003B DOC